- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
47 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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28,071
In-stock
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Nexperia | MOSFET TAPE13 MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 850 mA | 400 mOhms | Enhancement | ||||||
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GET PRICE |
84,000
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 1.2 A | 400 mOhms | 3.3 nC | |||||||
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2,923
In-stock
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Nexperia | MOSFET 40V P-channel Trench MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 1.5 A | 400 mOhms | - 1 V | 4.7 nC | Enhancement | ||||
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11,987
In-stock
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Fairchild Semiconductor | MOSFET 30V Dual N-CH PowerTrench MOSFET | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 750 mA | 400 mOhms | Enhancement | PowerTrench | |||||
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812
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 400mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 400 mOhms | 2.5 V | 43 nC | Enhancement | SuperFET II | |||
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533
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 11 Amp Power MDmesh | 30 V | Through Hole | TO-247-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 400 mOhms | Enhancement | ||||||
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1,616
In-stock
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IXYS | MOSFET 600V 18A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 400 mOhms | Enhancement | HyperFET | |||||
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3,297
In-stock
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STMicroelectronics | MOSFET N-Ch 200 Volt 10 Amp | 20 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9 A | 400 mOhms | Enhancement | ||||||
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753
In-stock
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Fairchild Semiconductor | MOSFET 600V N-CHAN MOSFET | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 400 mOhms | SuperFET II | |||||||
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GET PRICE |
6,230
In-stock
|
onsemi | MOSFET SuperFET2, 400mohm, 800V, Zener | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 400 mOhms | 4.5 V | 56 nC | SuperFET II | ||||
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5,279
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.3 A | 400 mOhms | 7.2 nC | ||||||||
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507
In-stock
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IXYS | MOSFET 500V 16A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | |||||
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562
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 6.3 A | 400 mOhms | Enhancement | QFET | |||||
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4,061
In-stock
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Nexperia | MOSFET TAPE7 PWR-MO | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 850 mA | 400 mOhms | Enhancement | ||||||
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4,628
In-stock
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Diodes Incorporated | MOSFET 400mW 20V | 8 V | SMD/SMT | SOT-563-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 670 mA | 400 mOhms | Enhancement | ||||||
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127
In-stock
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IXYS | MOSFET DIODE Id24 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | Enhancement | HyperFET | |||||
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1,209
In-stock
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Diodes Incorporated | MOSFET Complementary | 8 V | SMD/SMT | X1-DFN1612-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 750 mA | 400 mOhms | +/- 1 V | Enhancement | |||||
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813
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.3A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.3 A | 400 mOhms | 3 V | 32 nC | CoolMOS | ||||
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1,244
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Intellifet 500mohm 1.2A 210mJ | 5 V | SMD/SMT | SM-8 | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 1.2 A | 400 mOhms | 0.7 V to 1.5 V | Enhancement | IntelliFET | ||||
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192
In-stock
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IXYS | MOSFET 500V 16A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | |||||
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100
In-stock
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IXYS | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | 5.5 V | 43 nC | Enhancement | PolarHV | |||
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267
In-stock
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IXYS | MOSFET 500V 16A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | |||||
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149
In-stock
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IXYS | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | ||||||
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GET PRICE |
11,420
In-stock
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onsemi | MOSFET EXPD NCH+NCH 1.5A 60V | SOIC-8 | Reel | Si | N-Channel | 60 V | 1.5 A | 400 mOhms | |||||||||||
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30
In-stock
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IXYS | MOSFET 24 Amps 1000V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 400 mOhms | 5.5 V | 267 nC | Enhancement | ||||
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23,978
In-stock
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Fairchild Semiconductor | MOSFET Dual 20V N-Channel PowerTrench | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 700 mA | 400 mOhms | Enhancement | PowerTrench | |||||
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20
In-stock
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IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 5 V | 105 nC | Enhancement | PolarHV, HiPerFET | |||
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1,447
In-stock
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Texas instruments | MOSFET Single P-Ch Enh-Mode MOSFET | - 15 V, 2 V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Reel | 1 Channel | Si | P-Channel | - 15 V | - 1.6 A | 400 mOhms | Enhancement | ||||||
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4,840
In-stock
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Toshiba | MOSFET Small Signal MOSFET | 12 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 1.8 A | 400 mOhms | 500 mV | 1.1 nC | Enhancement | |||||
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387
In-stock
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Texas instruments | MOSFET Single P-Ch Enh-Mode MOSFET | - 15 V, 2 V | SMD/SMT | TSSOP-8 | - 40 C | + 125 C | Tube | 1 Channel | Si | P-Channel | - 15 V | - 1.27 A | 400 mOhms | Enhancement |
