- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Tradename :
- Applied Filters :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,632
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
2,981
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-CH PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.5 A | 9.6 mOhms | 18 nC | Enhancement | PowerTrench | ||||
|
|
8,790
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
947
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | ||||
|
|
413
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
688
In-stock
|
Fairchild Semiconductor | MOSFET 120V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 65 A | 9.6 mOhms | 4 V | 32 nC | PowerTrench | ||||
|
|
631
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 57A 12mOhm 43nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 57 A | 9.6 mOhms | 4 V | 43 nC | |||||
|
|
GET PRICE |
2,488
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9.6 mOhms | 1.7 V | 30 nC | Enhancement | |||
|
|
2,990
In-stock
|
Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgss 10A 0.78W | 8 V | SMD/SMT | W-DFN5020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 10 A | 9.6 mOhms | 1.1 V | 57.4 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET Mosfet, DCtoDC Nchannel 200V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
VIEW | Renesas Electronics | MOSFET POWER MOSFET TRANSISTOR | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 9.6 mOhms | Enhancement | ||||||
|
|
VIEW | STMicroelectronics | MOSFET N-Channel 100V 8mOhm 120A STripFET MOS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 9.6 mOhms | ||||||||||
|
|
4,086
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 9.6mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 71 A | 9.6 mOhms | 4 V | 40 nC | Enhancement |
