- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
30
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | +/- 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 40 A | 145 mOhms | 3.5 V | 98 nC | Enhancement | HiPerFET | |||
|
|
GET PRICE |
22,868
In-stock
|
onsemi | MOSFET -60V 2.6A P-Channel | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.6 A | 145 mOhms | Enhancement | |||||
|
|
4,608
In-stock
|
onsemi | MOSFET NFET WDFN6 30V 1.5A 200mOhm | 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.5 A | 145 mOhms | 1.1 V | 1.4 nC | |||||
|
|
75
In-stock
|
IXYS | MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 145 mOhms | 5 V | 94 nC | HyperFET | ||||||
|
|
81
In-stock
|
IXYS | MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 145 mOhms | 5 V | 94 nC | HyperFET | ||||||
|
|
54
In-stock
|
IXYS | MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 145 mOhms | 5 V | 94 nC | HyperFET | ||||||
|
|
482
In-stock
|
IR / Infineon | MOSFET MOSFET_(120V,300V)_47 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 19 A | 145 mOhms | 3 V | 57 nC | Enhancement | ||||
|
|
20
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 42 A | 145 mOhms | Polar2 HiPerFET | ||||||
|
|
34
In-stock
|
Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 34 A | 145 mOhms | 2.1 V | 180 nC | Enhancement | |||||||
|
|
1,583
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 42 A | 145 mOhms | Polar2 HiPerFET | ||||||
|
|
VIEW | IXYS | MOSFET PolarP2 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 42 A | 145 mOhms | Polar2 HiPerFET | ||||||
|
|
985
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II | 25 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 21 A | 145 mOhms | 4 V | 54.6 nC | |||||||
|
|
6,350
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 145 mOhms | 4 V | 54.6 nC | |||||||
|
|
428
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 145 mOhms | 4 V | 54.6 nC | |||||||
|
|
954
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 145 mOhms | 4 V | 54.6 nC |
