- Mounting Style :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Applied Filters :
36 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,841
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement | ||||
|
|
875
In-stock
|
Fairchild Semiconductor | MOSFET Low Power Two-Input Logic Gate TinyLogic | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 15 A | 260 mOhms | 3.5 V | 48 nC | SuperFET II | ||||
|
|
977
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 260 mOhms | Enhancement | UniFET | |||||
|
|
623
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement | ||||
|
|
54,590
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 2 Amp | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2 A | 260 mOhms | Enhancement | ||||||
|
|
GET PRICE |
13,782
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 260 mOhms | Enhancement | UniFET | ||||
|
|
686
In-stock
|
Fairchild Semiconductor | MOSFET MOSFET UNIFET1 500V ,20A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 20 A | 260 mOhms | 5 V | 50 nC | Enhancement | UniFET | |||
|
|
835
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 260 mohm 650V FRFET | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 15 A | 260 mOhms | 5 V | 46 nC | SuperFET II FRFET | ||||
|
|
1,187
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 55A 26mOhm 93.3nC LogLvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 260 mOhms | 93.3 nC | ||||||||
|
|
203
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement | ||||
|
|
3,608
In-stock
|
onsemi | MOSFET PFET U8FL 60V 8A 260MOHM | SMD/SMT | WDFN-8 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6 A | 260 mOhms | ||||||||||
|
|
27
In-stock
|
IXYS | MOSFET 40 Amps 1100V 0.2600 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 40 A | 260 mOhms | Enhancement | HyperFET | |||||
|
|
194
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 260 mOhms | Enhancement | UniFET | |||||
|
|
1,315
In-stock
|
Infineon Technologies | MOSFET MOSFT 48A 93.3nC 260mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 48 A | 260 mOhms | 93.3 nC | ||||||||
|
|
1,092
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 7.7A 180mOhm 13.3nC LogLv | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 7.7 A | 260 mOhms | 13.3 nC | ||||||||
|
|
586
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 13 A | 260 mOhms | 3 V | 20 nC | Enhancement | |||||
|
|
414
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V 0.27 ohm 13A MDmesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 260 mOhms | 35 nC | ||||||
|
|
25
In-stock
|
IXYS | MOSFET | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.1 kV | 40 A | 260 mOhms | 3.5 V | 300 nC | Enhancement | HyperFET | ||||
|
|
30
In-stock
|
IXYS | MOSFET -22.0 Amps -500V 0.260 Rds | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 500 V | - 22 A | 260 mOhms | |||||||||||
|
|
28
In-stock
|
Fairchild Semiconductor | MOSFET PWM Controller mWSaver | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 15 A | 260 mOhms | 3.5 V | 48 nC | SuperFET II | ||||
|
|
30
In-stock
|
IXYS | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 260 mOhms | 5 V | 50 nC | HyperFET | ||||||
|
|
43
In-stock
|
IXYS | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 260 mOhms | 5 V | 50 nC | HyperFET | ||||||
|
|
2,546
In-stock
|
Texas instruments | MOSFET 30V,N-Ch FemtoFET MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.5 A | 260 mOhms | 850 mV | 1.01 nC | |||||
|
|
3
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS7 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 38 A | 260 mOhms | 3 V | 267 nC | Enhancement | |||||
|
|
14,060
In-stock
|
Texas instruments | MOSFET 30V N-CH Pwr MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.5 A | 260 mOhms | 850 mV | 1.01 nC | FemtoFET | ||||
|
|
496
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-CH MOSFET SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 260 mOhms | Enhancement | ||||||
|
|
11,950
In-stock
|
onsemi | MOSFET 8V +/-1.3A P-Channel w/Level Shift | 1 V | SMD/SMT | SC-88-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 8 V | - 1.3 A | 260 mOhms | Enhancement | ||||||
|
|
3,000
In-stock
|
onsemi | MOSFET Pwr MOSFET 60V 8A 260mOhm SGL P-CH | WDFN-8 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6 A | 260 mOhms | |||||||||||
|
|
23,996
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-CH SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 260 mOhms | Enhancement | ||||||
|
|
VIEW | onsemi | MOSFET Pwr MOSFET 60V 8A 260mOhm SGL P-CH | WDFN-8 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6 A | 260 mOhms |
