- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,403
In-stock
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Fairchild Semiconductor | MOSFET 30V/20V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 6.3 mOhms | 1.9 V | 9.9 nC | Enhancement | PowerTrench | |||
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55,020
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 6.3 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
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1,797
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Chan DualCool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 40 A | 6.3 mOhms | 3.7 V | 29 nC | Depletion | PowerTrench | |||
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6,134
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.3 mOhms | 1.2 V | 29 nC | Enhancement | OptiMOS | |||
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4,764
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 6.3 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
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4,399
In-stock
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onsemi | MOSFET NCH+NCH 2.5V DRIVE S | 8 V | SMD/SMT | CSP-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V | 27 A | 6.3 mOhms | 500 mV | 100 nC | Enhancement | |||||
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638
In-stock
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Fairchild Semiconductor | MOSFET 30V 14A 7.6 OHM NCH POWER | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 6.3 mOhms | Enhancement | PowerTrench | |||||
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394,000
In-stock
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 10.5 A | 6.3 mOhms | 46 nC | |||||||
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8,900
In-stock
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IR / Infineon | MOSFET 30V SINGLE N-CH 4.1mOhms 14nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 6.3 mOhms | 1.8 V | 31 nC | |||||
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1,175
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.3 mOhms | 1.2 V | 29 nC | Enhancement | OptiMOS | |||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 6.3 mOhms | 18 nC | OptiMOS | |||||
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91
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET Pwr MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 220 A | 6.3 mOhms | 5 V | 500 nC | Enhancement | GigaMOS, HiperFET | |||
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100
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET Pwr MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 170 V | 220 A | 6.3 mOhms | HiPerFET | ||||||||||
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25
In-stock
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IXYS | MOSFET 200 Amps 100V 5.4 Rds | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 6.3 mOhms | Enhancement | |||||||
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3,425
In-stock
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Toshiba | MOSFET U-MOSVIII-H 30V 63A 6.8nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 63 A | 6.3 mOhms | 2.3 V | 14.8 nC | Enhancement | ||||||
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723
In-stock
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Texas instruments | MOSFET CSD17578Q3A 30 V 8-VSONP | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 6.3 mOhms | 1.1 V | 22.2 nC | Enhancement | NexFET | |||
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836
In-stock
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Toshiba | MOSFET P-Ch MOS -60A -40V 90W 6510pF 0.0063 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 60 A | 6.3 mOhms | ||||||||||
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GET PRICE |
46,340
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 6.3 mOhms | 1.2 V | 7.5 nC | NexFET | |||
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2,029
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | |||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.3 mOhms | 1.2 V | 64 nC | Enhancement |
