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13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
108,680
In-stock
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IR / Infineon | MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | ||||||||
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4,084
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 62 A | 12.6 mOhms | 4 V | 89 nC | Enhancement | |||||
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2,487
In-stock
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IR / Infineon | MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | |||||||||
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2,302
In-stock
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IR / Infineon | MOSFET MOSFT 60V 43A 16.2mOhm 22nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | |||||||||
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914
In-stock
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Infineon Technologies | MOSFET 60V SINGLE N-CH 15.8mOhms 22nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | |||||||||
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1,407
In-stock
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IR / Infineon | MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | |||||||||
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374
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 35A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 12.6 mOhms | 9 nC | Enhancement | OptiMOS | |||||
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438
In-stock
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Infineon Technologies | MOSFET 75V 80A 12.6mOhm Automotive MOSFET | Through Hole | TO-220-3 | + 175 C | Tube | Si | N-Channel | 75 V | 80 A | 12.6 mOhms | 89 nC | ||||||||||
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184
In-stock
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Infineon Technologies | MOSFET 60V SINGLE N-CH 15.8mOhms 22nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | |||||||||
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674
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 21W 510pF 32A 30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 12.6 mOhms | 2.3 V | 7.5 nC | Enhancement | |||||
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38
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 31 A | 12.6 mOhms | 2.3 V | 7.5 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 12.6 mOhms | 89 nC | Enhancement | ||||||
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1,387
In-stock
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IR / Infineon | MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC |