- Vgs - Gate-Source Voltage :
- Mounting Style :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
28 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,490
In-stock
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Fairchild Semiconductor | MOSFET 600V 4.6A N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.6 A | 950 mOhms | Enhancement | SuperFET | ||||||
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1,569
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.76 Ohm 6AMDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 950 mOhms | 4 V | 16.5 nC | Enhancement | |||||
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3,014
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | ||||||
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1,470
In-stock
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STMicroelectronics | MOSFET N-CH 800V 0.8Ohm typ 6A Zener-protected | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 950 mOhms | 3 V | 16.5 nC | Enhancement | |||||
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830
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-0.85ohms 7A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 3.75 V | 38 nC | Enhancement | |||||
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1,205
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 4.5A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | ||||||
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2,795
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.4A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 950 mOhms | 3 V | 13 nC | CoolMOS | |||||
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1,980
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.4A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 950 mOhms | 13 nC | CoolMOS | ||||||
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150
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 16 A | 950 mOhms | Enhancement | HyperFET | ||||||
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90
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 16 A | 950 mOhms | 6.5 V | 120 nC | Enhancement | Polar, HiPerFET | ||||
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833
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.5A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | ||||||
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256
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.76 Ohm 6A MDmesh K5 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 950 mOhms | 4 V | 16.5 nC | Enhancement | |||||
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439
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 38 nC | Enhancement | ||||||
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740
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 4.4A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 950 mOhms | CoolMOS | |||||||
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385
In-stock
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onsemi | MOSFET 600V 0.95 OHM TO- 220FP | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 950 mOhms | 4.5 V | 39 nC | ||||||
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623
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.5A D2PAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | ||||||
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5,684
In-stock
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Nexperia | MOSFET 20 V, P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.9 A | 950 mOhms | - 400 mV | 6.8 nC | Enhancement | |||||
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1,065
In-stock
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Infineon Technologies | MOSFET N-Ch 560V 4.5A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 950 mOhms | CoolMOS | ||||||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.5A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | ||||||
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VIEW | Infineon Technologies | MOSFET CONSUMER | Through Hole | TO-220FP-3 | Tube | Si | 500 V | 950 mOhms | CoolMOS | |||||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS S5 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 0.95 Ohm 7.0A TO-220 | Through Hole | TO-220-3 | Tube | Si | N-Channel | 620 V | 7 A | 950 mOhms | ||||||||||||
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VIEW | IXYS | MOSFET 11 Amps 800V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 950 mOhms | Enhancement | HyperFET | ||||||
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626
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.76 Ohm 6 A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 950 mOhms | 4 V | 16.5 nC | Enhancement | |||||
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968
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | Enhancement | |||||||
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1,499
In-stock
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STMicroelectronics | MOSFET N-Ch 620 V 0.95 Ohm 5.5 A SuperMESH | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 5.5 A | 950 mOhms | 3.75 V | 34 nC | Enhancement | SuperMesh | ||||
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585
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 4.5A DPAK-2 CoolMOS S5 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | ||||||
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900
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.5A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 650 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS |