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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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348
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 78mOhms 25nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 77.5 mOhms | 3 V to 5 V | 25 nC | Enhancement | |||
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54
In-stock
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IR / Infineon | MOSFET MOSFT 200V 24A 78mOhm 25nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 24 A | 77.5 mOhms | 25 nC | Enhancement | ||||
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300
In-stock
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IR / Infineon | MOSFET MOSFT 200V 24A 78mOhm 25nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 77.5 mOhms | 25 nC | Enhancement |
