- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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23,073
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 COMP N-P CH | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 2.7 A, - 1.9 A | 69 mOhms | Enhancement | PowerTrench | ||||||
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7,800
In-stock
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Fairchild Semiconductor | MOSFET SuperSOT-3 | + 8 V, - 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V | - 2.5 A | 69 mOhms | Enhancement | PowerTrench | ||||||
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3,813
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -30A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 69 mOhms | - 4 V | 48 nC | Enhancement | SIPMOS | ||||
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2,000
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Chan MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 69 mOhms | Enhancement | |||||||
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1,520
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 44 A | 69 mOhms | Enhancement | |||||||
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582
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 43.5 A | 69 mOhms | Enhancement | QFET | ||||||
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2,219
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -30A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 69 mOhms | - 4 V | 48 nC | Enhancement | |||||
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4,493
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 69 mOhms | 2 V | 25.2 nC | Enhancement | |||||
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2,810
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 5 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.5 A | 69 mOhms | ||||||||
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217
In-stock
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Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-247AC | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 69 mOhms | 5 V | 125 nC | Enhancement | ||||||
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9,564
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6 A | 69 mOhms | 1.5 V | 9.3 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N Ch 500V 0.21 15A Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 69 mOhms | Enhancement | |||||||
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191
In-stock
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STMicroelectronics | MOSFET Hi Vltg Pwr SCHOTTKY RECTIF | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 45 A | 69 mOhms | Enhancement |