- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- 80 A (1)
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- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
50 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,556
In-stock
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Fairchild Semiconductor | MOSFET 30V DUAL N-CH. FET 18 MO SO8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 17 mOhms | Enhancement | PowerTrench SyncFET | ||||||
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4,644
In-stock
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Fairchild Semiconductor | MOSFET 60V Dual N-Channel Power Trench MOSFET | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 8.2 A | 17 mOhms | 7.9 nC, 17 nC | Enhancement | PowerTrench | ||||||
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316
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | ||||
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236
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | ||||
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263
In-stock
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IXYS | MOSFET 650V/145A Ultra Junction X2-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 145 A | 17 mOhms | 2.7 V | 355 nC | Enhancement | HiPerFET | |||||
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16,286
In-stock
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Diodes Incorporated | MOSFET 20V P-CH MOSFET | 8 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 12 A | 17 mOhms | - 0.4 V to - 1 V | 75 nC | Enhancement | |||||
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GET PRICE |
50,140
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -12V 9.2A | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V | - 9.2 A | 17 mOhms | - 0.9 V | 57 nC | |||||||
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756
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 17 mOhms | 3 V | 150 nC | Enhancement | |||||
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3,059
In-stock
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Infineon Technologies | MOSFET 20V DUAL P-CH HEXFET 17mOhms 38nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 12 V | - 9.2 A | 17 mOhms | 38 nC | Enhancement | ||||||
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2,556
In-stock
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onsemi | MOSFET Dual N-Channel Full BridgeRectifierUDFN8 | 10 V | SMD/SMT | UDFN-8 | - 55 C | + 125 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2.2 A | 17 mOhms | ||||||||
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102
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | ||||
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100
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 250 V | 100 A | 17 mOhms | 2.5 V | 255 nC | Enhancement | GigaMOS, HiperFET | |||||
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2,750
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 38 A | 17 mOhms | Enhancement | PowerTrench | ||||||
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1,951
In-stock
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STMicroelectronics | MOSFET N-Ch 60 V 0.017 Ohm 7.5 A STripFET II | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.5 A | 17 mOhms | Enhancement | |||||||
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430
In-stock
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IXYS | MOSFET MOSFET 650V/150A Ultra Junction X2 | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 150 A | 17 mOhms | 2.7 V | 430 nC | Enhancement | |||||
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2,375
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 15.5mOhms 23nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 9 A | 17 mOhms | 0.8 V to 2 V | 23 nC | Enhancement | |||||
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19,540
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 9A 15.5mOhm 23nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 9 A | 17 mOhms | 23 nC | |||||||||
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5,598
In-stock
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC | 20 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 9.9 A | 17 mOhms | 1.8 V | 4.3 nC | ||||||
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892
In-stock
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STMicroelectronics | MOSFET Automotive-grade P-channel 40 V, 0.013 Ohm typ., 46 A STripF... | +/- 18 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 17 mOhms | - 2.5 V | 65.5 nC | Enhancement | STripFET | ||||
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2,319
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 3.7A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.7 A | 17 mOhms | 300 mV | 4.7 nC | Enhancement | |||||
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1,749
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | +/- 25 V | SMD/SMT | SO-8 | - 50 C | + 155 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.9 A | 17 mOhms | - 3 V | 41 nC | Enhancement | |||||
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2,485
In-stock
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onsemi | MOSFET NFET U8FL 30V 27A 17MOHM | SMD/SMT | WDFN-8 | Reel | Si | N-Channel | 30 V | 22 A | 17 mOhms | ||||||||||||
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565
In-stock
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onsemi | MOSFET NFET DPAK 60V 54A 17MOHM | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 60 V | 54 A | 17 mOhms | ||||||||||||
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2,351
In-stock
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onsemi | MOSFET SWITCHING DEVICE | SMD/SMT | ECH-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 17 mOhms | |||||||||||
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1,330
In-stock
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IR / Infineon | MOSFET MOSFT 55V 61A 14mOhm 61nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 17 mOhms | 61 nC | |||||||||
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477
In-stock
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onsemi | MOSFET NFET U8FL 30V 27A 17MOHM | SMD/SMT | WDFN-8 | Reel | Si | N-Channel | 30 V | 27 A | 17 mOhms | ||||||||||||
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7,337
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 40A 23nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | |||||||
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629
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 37A 23nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 17 mOhms | 2.5 V | 23 nC | Enhancement | |||||||
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4,836
In-stock
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Fairchild Semiconductor | MOSFET SO-8 P-CH -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 17 mOhms | Enhancement | |||||||
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120,000
In-stock
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IR / Infineon | MOSFET Dual MOSFT PCh -8.0A 21.0mOhm -4.5V capbl | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC |