- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,958
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.4 mOhms | 2 V | 69 nC | Enhancement | ||||
|
|
2,460
In-stock
|
onsemi | MOSFET DPAK 3W SMT PBF | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 40 V | 101 A | 4.4 mOhms | |||||||||||
|
|
2,503
In-stock
|
STMicroelectronics | MOSFET N-Ch 30V 0.0039 Ohm 26A STripFET VI DG | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 26 A | 4.4 mOhms | |||||||
|
|
2,015
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 4.4 mOhms | 2.2 V | 69 nC | Enhancement | ||||
|
|
1,950
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 37 nC | PowerTrench SyncFET | |||||
|
|
1,317
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 21A 3.6mOhm 40nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 40 nC | ||||||||
|
|
115
In-stock
|
Infineon Technologies | MOSFET LV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 40 A | 4.4 mOhms | 1.6 V | 11 nC | Enhancement | |||||
|
|
959
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 4.4 mOhms | 135 nC | OptiMOS | |||||
|
|
761
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.4 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
|
|
557
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -80A TO220-3 OptiMOS-P2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 4.4 mOhms | OptiMOS | |||||||||
|
|
122
In-stock
|
IR / Infineon | MOSFET MOSFT 20V 20A 4.4mOhm 22nC Qg | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 20 A | 4.4 mOhms | 2.45 V | 33 nC | ||||||||
|
|
295
In-stock
|
Toshiba | MOSFET MOSFET NCh 4.4ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 58 A | 4.4 mOhms | 2 V to 4 V | 46 nC | Enhancement | |||||
|
|
241
In-stock
|
Texas instruments | MOSFET 60-V N-Channel NexFET Power Mosfet | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.4 mOhms | 2.4 V | 49 nC | Enhancement | NexFET | |||
|
|
20,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.4 mOhms | 2.3 V | 68 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
12,500
In-stock
|
Texas instruments | MOSFET N-Ch NexFET Pwr MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 4.4 mOhms | 1.1 V | 6.2 nC | Enhancement | NexFET | ||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.4 mOhms | 2 V | 82 nC | Enhancement | OptiMOS | |||
|
|
VIEW | IXYS | MOSFET SMPD MOSFETs Power Device | 20 V | SMD/SMT | SMPD-24 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 235 A | 4.4 mOhms | 5 V | 715 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.4 mOhms | 2.3 V | 68 nC | Enhancement | OptiMOS | |||
|
|
VIEW | IXYS | MOSFET 280 Amps 85V 0.0044 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 85 V | 280 A | 4.4 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | Toshiba | MOSFET MOSFET N-CH 40V 18A | SOP-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 18 A | 4.4 mOhms | |||||||||||
|
|
209
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 100A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 100 A | 4.4 mOhms | Enhancement | OptiMOS | |||||
|
|
124
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.6mOhms 40nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 40 nC | Enhancement | |||||
|
|
7
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 90A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 4.4 mOhms | Enhancement | OptiMOS |
