- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
47,000
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 75 A | 11.4 mOhms | 49 nC | OptiMOS | ||||
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GET PRICE |
5,000
In-stock
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Siliconix / Vishay | MOSFET -100V Vds TrenchFET -/+20V Vgs TO-220AB | Through Hole | TO-220AB | - 55 C | + 175 C | Tube | 1 Channel | P-Channel | - 100 V | - 120 A | 11.4 mOhms | - 2.5 V | 125 nC | |||||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 30V 12A | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 11.4 mOhms | Enhancement | ||||||
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4,283
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 45A DPAK-2 OptiMOS 3 | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 45 A | 11.4 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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96
In-stock
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IR / Infineon | MOSFET MOSFT 20V 60A 8.4mOhm 9.3nC Qg | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 60 A | 11.4 mOhms | 9.3 nC |
