- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,336
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH -20V | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 48 mOhms | Enhancement | PowerTrench | |||||
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2,287
In-stock
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onsemi | MOSFET NFET 60V 20A 48MOHM | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 60 V | 20 A | 48 mOhms | |||||||||||
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2,134
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 55 MOSFET 55V 60mOhm | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | Si | N-Channel | 55 V | 5 A | 48 mOhms | 3 V | 7 nC | Enhancement | |||||
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1,687
In-stock
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Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.7 A | 48 mOhms | Enhancement | PowerTrench | |||||
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2,644
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 48 mOhms | 1 V | 6 nC | Enhancement | |||||
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5,583
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.5 A | 48 mOhms | - 1.25 V | 11 nC | Enhancement | ||||
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6,436
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.4 A | 48 mOhms | - 900 mV | 7.7 nC | Enhancement | ||||
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1,690
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 60V, 4.1A/- 5.0A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.7 A | 48 mOhms | 5.4 nC | ||||||
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2,845
In-stock
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Nexperia | MOSFET 20V 4.1A P-channel Trench MOSFET | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.1 A | 48 mOhms | - 1 V | 8.7 nC | Enhancement | |||||
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9
In-stock
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IXYS | MOSFET -90.0 Amps -200V 0.048 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 53 A | 48 mOhms | - 4 V | 205 nC | Enhancement | PolarP | ||||
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1,865
In-stock
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Toshiba | MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 48 mOhms | |||||||||
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1,993
In-stock
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onsemi | MOSFET 30V 4A N-Channel | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4 A | 48 mOhms | Enhancement | ||||||
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2,500
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.3 A | 48 mOhms | 5.4 nC | ||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT363,3K | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.8 A | 48 mOhms | 7 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET P-Ch MOS 1100 pF 29W PD -15A -40V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 15 A | 48 mOhms | ||||||||||
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468
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.049 Ohm 55A MDmesh II FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 48 mOhms | 4 V | 130 nC | |||||||
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49
In-stock
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IR / Infineon | MOSFET MOSFT 250V 45A 48mOhm 72nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 48 mOhms | 72 nC | Enhancement |
