- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DFN2020MD-6 (2)
- DualCool-56-8 (1)
- Max247-3 (1)
- Picostar-3 (2)
- PowerDI3333-8 (5)
- POWERDI5060-8 (2)
- SO-8 (13)
- SO-FL-8 (2)
- SOIC-8 (2)
- SOP-8 (1)
- TO-220-3 (7)
- TO-220FP-3 (1)
- TO-247-3 (5)
- TO-252-3 (9)
- TO-263-3 (5)
- TO-264-3 (1)
- TO-268-3 (2)
- TO-3P-3 (1)
- TO-3PL-3 (1)
- TSSOP-8 (1)
- U-DFN2020-E-6 (2)
- U-DFN2020-F-6 (2)
- VSON-Clip-8 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 10.1 A (1)
- - 11.4 A (1)
- - 11.8 A (2)
- - 13 A (1)
- - 49 A (1)
- - 8.5 A (2)
- - 8.6 A (1)
- - 8.9 A (2)
- 10 A (3)
- 10.5 A (1)
- 100 A (2)
- 105 A (1)
- 11 A (2)
- 11.5 A (1)
- 11.7 A (2)
- 110 A (2)
- 12 A (2)
- 128 A (1)
- 138 A (1)
- 150 A (2)
- 16 A (1)
- 30 A (1)
- 39 A (2)
- 40 A (3)
- 43 A (1)
- 50 A (2)
- 52 A (1)
- 57 A (1)
- 6.9 A (1)
- 60 A (4)
- 61 A (1)
- 62 A (1)
- 65 A (1)
- 7 A (1)
- 7.1 A (2)
- 7.4 A (1)
- 76 A (1)
- 80 A (7)
- 85 A (1)
- 9.1 A (2)
- 9.2 A (2)
- 9.9 A (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
69 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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586
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 V 0.012 Ohm 138 A MDmesh M5 | 25 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 138 A | 15 mOhms | 4 V | 414 nC | ||||||
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21,735
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 15 mOhms | Enhancement | OptiMOS | ||||||
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4,300
In-stock
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STMicroelectronics | MOSFET N-Ch, 100V-0.015ohms 60A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 15 mOhms | Enhancement | |||||||
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7,061
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 52 A | 15 mOhms | 4 V | 33 nC | PowerTrench | |||||
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1,191
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 15 mOhms | Enhancement | PowerTrench | ||||||
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2,258
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 13mOhms 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 11 A | 15 mOhms | 0.8 V to 2 V | 29 nC | Enhancement | |||||
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2,710
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 80 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | Enhancement | |||||||
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3,293
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 61 A | 15 mOhms | 2 V | 24 nC | Enhancement | |||||
|
4,753
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 15 mOhms | Enhancement | PowerTrench | ||||||
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3,239
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 15 mOhms | Enhancement | PowerTrench | ||||||
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2,386
In-stock
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Fairchild Semiconductor | MOSFET N-Channel MOSFET 2.5V Specified | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.4 A | 15 mOhms | Enhancement | PowerTrench | ||||||
|
1,071
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 55 Amp | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 15 mOhms | 3 V | 44.5 nC | Enhancement | |||||
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1,019
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 80 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | Enhancement | |||||||
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13,694
In-stock
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onsemi | MOSFET PFET SO8 30V 9.6A TR | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.4 A | 15 mOhms | Enhancement | |||||||
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2,180
In-stock
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Diodes Incorporated | MOSFET P-Ch -40V 11mOhm 25Vgss 1.45W -10.1A | +/- 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.1 A | 15 mOhms | - 2 V | 47.5 nC | Enhancement | |||||
|
3,078
In-stock
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Nexperia | MOSFET PMPB15XP/SOT1220/REEL 7" Q1/T1 | 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 11.8 A | 15 mOhms | - 900 mV | 100 nC | Enhancement | |||||
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4,472
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 9.9A 14.6mOhm 2.5V cpbl | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.9 A | 15 mOhms | 1.1 V | 11 nC | ||||||
|
4,473
In-stock
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Diodes Incorporated | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A | 16 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 9.1 A | 15 mOhms | 2 V | 6.1 nC | Enhancement | |||||
|
2,074
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -8.9A DSO-8 OptiMOS P | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.9 A | 15 mOhms | - 1.2 V | - 39 nC | Enhancement | OptiMOS | ||||
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4,209
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | |||||
|
911
In-stock
|
STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp | 20 V | SMD/SMT | TO-263-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 15 mOhms | Enhancement | |||||||
|
753
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 40 A | 15 mOhms | Enhancement | PowerTrench | ||||||
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1,092
In-stock
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STMicroelectronics | MOSFET N-Ch Clamped 62 Amp | 18 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 33 V | 62 A | 15 mOhms | Enhancement | |||||||
|
2,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.5 A | 15 mOhms | 2.5 V | 12.5 nC | Enhancement | |||||
|
670
In-stock
|
STMicroelectronics | MOSFET N-Ch, 100V-0.015ohms 60A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 65 A | 15 mOhms | Enhancement | |||||||
|
697
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 12V 10A | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V | 10 A | 15 mOhms | 2 V | 26 nC | ||||||||
|
60
In-stock
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IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT | ||||
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3,770
In-stock
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Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 15 mOhms | 1 V | 10.5 nC | Enhancement | |||||
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1,540
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 15 mOhms | 1 V | 17 nC | Enhancement | |||||
|
30
In-stock
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IXYS | MOSFET Trench HiperFETs Power MOSFETs | Through Hole | TO-268-3 | Tube | Si | N-Channel | 200 V | 150 A | 15 mOhms | HiPerFET |