- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
43 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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25,053
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.4 A | 36 mOhms | 400 mV | 12 nC | Enhancement | ||||
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16,207
In-stock
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Fairchild Semiconductor | MOSFET Single PT8 N 30/20V in SSOT6 | SMD/SMT | SSOT-6 | + 150 C | Reel | Si | N-Channel | 30 V | 6.5 A | 36 mOhms | PowerTrench | |||||||||
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5,933
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 18 A | 36 mOhms | Enhancement | PowerTrench | |||||
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4,090
In-stock
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Fairchild Semiconductor | MOSFET 20a 55V N-Channel UltraFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 20 A | 36 mOhms | Enhancement | UltraFET | |||||
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55,270
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel Power Trench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.2 A | 36 mOhms | Enhancement | PowerTrench | |||||
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3,304
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PwrTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.5 A | 36 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
26,900
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 39A 36mOhm 73.3nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 39 A | 36 mOhms | 73.3 nC | |||||||
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7,959
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 33A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 36 mOhms | 3 V | 12 nC | Enhancement | OptiMOS | |||
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3,600
In-stock
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Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 4.5 A | 36 mOhms | Enhancement | UltraFET | |||||
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2,282
In-stock
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Fairchild Semiconductor | MOSFET PT5 100/20V Dual Nch Power Trench MOSFET | 20 V | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 24 A | 36 mOhms | 3 V | 24 nC | PowerTrench Power Clip | ||||
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3,600
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET, FRFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 76 A | 36 mOhms | 3 V to 5 V | 277 nC | SuperFET II FRFET | ||||
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615
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 44 A | 36 mOhms | 2 V | 87 nC | Enhancement | ||||
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3,258
In-stock
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IR / Infineon | MOSFET 60VAUTO GRADE 1 N-CH HEXFET 36mOhms | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 21 A | 36 mOhms | 7.3 nC | Enhancement | |||||
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4,181
In-stock
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Fairchild Semiconductor | MOSFET -20V Single P-Ch. PowerTrench MOSFET | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.6 A | 36 mOhms | Enhancement | PowerTrench | |||||
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2,491
In-stock
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Fairchild Semiconductor | MOSFET 20a 55V N-Channel UltraFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 20 A | 36 mOhms | Enhancement | ||||||
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1,747
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 42A 36mOhm 73.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | ||||||||
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3,597
In-stock
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Fairchild Semiconductor | MOSFET 30V Single N-Ch PowerTrench MOSFET | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 36 mOhms | 3 V | 8.4 nC | PowerTrench | |||||
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686
In-stock
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Fairchild Semiconductor | MOSFET 100V 32a .36Ohm/VGS=1V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 36 mOhms | Enhancement | PowerTrench | |||||
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407
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 42A 36mOhm 73.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | ||||||||
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328
In-stock
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Fairchild Semiconductor | MOSFET TO263_03, SINGLE, N-CH, 150V, 42MOHM ULTRAFE... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 35 A | 36 mOhms | 3 V | 30 nC | |||||
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1,391
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgss 1.8W | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.8 A | 36 mOhms | - 3 V | 24 nC | Enhancement | ||||
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45
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 94 A | 36 mOhms | HyperFET | |||||||||
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1,564
In-stock
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Diodes Incorporated | MOSFET MOSFET P-CHAN. | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 36 mOhms | - 1 V | 9.1 nC | Enhancement | ||||
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2,470
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | - 4.8 A | 36 mOhms | - 2 V | 10.5 nC | Enhancement | ||||
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30
In-stock
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IXYS | MOSFET Trench HiperFETs Power MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 300 V | 94 A | 36 mOhms | HiPerFET | ||||||||||
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51
In-stock
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onsemi | MOSFET 24V 60A POWER MOSFET | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 24 A | 36 mOhms | Enhancement | ||||||
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170
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 36mOhms 73.3 nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | Enhancement | |||||
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213
In-stock
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Nexperia | MOSFET P-CH -20 V -4 A | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 4 A | 36 mOhms | 15.5 nC | ||||||||||
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63
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 22A 36mOhm 80nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 22 A | 36 mOhms | 80 nC | ||||||||
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10
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 94 A | 36 mOhms | 3 V | 102 nC | Enhancement | HyperFET |
