- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Applied Filters :
33 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
14,189
In-stock
|
Diodes Incorporated | MOSFET 30V P-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 330 mOhms | Enhancement | ||||||
|
|
1,085
In-stock
|
Fairchild Semiconductor | MOSFET 15A 500V 0.38 Ohm N-Ch SMPS Pwr | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 500 V | 15 A | 330 mOhms | Enhancement | ||||||
|
|
1,698
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9 A | 330 mOhms | 3 V to 5 V | 17.8 nC | SupreMOS | ||||
|
|
658
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 40 nC | ||||||
|
|
898
In-stock
|
Fairchild Semiconductor | MOSFET SupreMOS 9A | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9 A | 330 mOhms | SupreMOS | ||||||||
|
|
445
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V 2.75 Ohm 17.5A MDmesh K5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 40 nC | ||||||
|
|
1,063
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 40 nC | |||||||||
|
|
592
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V .275Ohm 17.5A Zener-protect | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 3 V | 40 nC | Enhancement | ||||
|
|
655
In-stock
|
Fairchild Semiconductor | MOSFET SupreMOS 9A | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 330 mOhms | SupreMOS | ||||||||
|
|
202
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 40 nC | ||||||
|
|
485
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 13.4A TO220FP CoolMOS CFD | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.4 A | 330 mOhms | Enhancement | CoolMOS | |||||
|
|
240
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 13.4A TO247-3 CoolMOS CFD | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.4 A | 330 mOhms | Enhancement | CoolMOS | |||||
|
|
186
In-stock
|
Fairchild Semiconductor | MOSFET 650V, 380mOhm SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.2 A | 330 mOhms | 3.5 V | 30 nC | Enhancement | ||||
|
|
588
In-stock
|
Nexperia | MOSFET TAPE13 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 330 mOhms | Enhancement | ||||||
|
|
64
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 20 A | 330 mOhms | 3.5 V | 63 nC | Enhancement | HiPerFET | |||
|
|
87
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 20 A | 330 mOhms | 3.5 V | 63 nC | Enhancement | HiPerFET | |||
|
|
88
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 20 A | 330 mOhms | 3.5 V | 63 nC | Enhancement | HiPerFET | |||
|
|
82
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 330 mOhms | Polar2 HiPerFET | ||||||
|
|
37
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 330 mOhms | Polar2 HiPerFET | ||||||
|
|
3
In-stock
|
IXYS | MOSFET 20 Amps 500V 0.33 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 330 mOhms | - 3.5 V | 78.5 nC | Depletion | ||||
|
|
113
In-stock
|
Toshiba | MOSFET MOSFET NChannel 0.33ohm DTMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 11.1 A | 330 mOhms | 2.5 V to 3.5 V | 25 nC | Enhancement | |||||
|
|
9
In-stock
|
Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 37 A | 330 mOhms | 4 V | 305 nC | Enhancement | ||||||
|
|
4,739
In-stock
|
Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 330 mOhms | 10 nC | Enhancement | |||||
|
|
VIEW | IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 330 mOhms | Polar2 HiPerFET | ||||||
|
|
VIEW | IXYS | MOSFET 20 Amps 500V 0.33 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 330 mOhms | Depletion | ||||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 650V 13.4A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 13.4 A | 330 mOhms | CoolMOS | |||||||||
|
|
VIEW | Toshiba | MOSFET N-Ch MOS 16A 550V 50W 2600pF 0.33 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 16 A | 330 mOhms | |||||||||||
|
|
VIEW | IXYS | MOSFET 25 Amps 900V 0.33 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 25 A | 330 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 25 Amps 900V 0.33 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 25 A | 330 mOhms | Enhancement | HyperFET | |||||
|
|
VIEW | IXYS | MOSFET 25 Amps 900V 0.33 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 25 A | 330 mOhms | Enhancement | HyperFET |
