- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Applied Filters :
65 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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17,058
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH -30V | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 1.8 A | 170 mOhms | Enhancement | PowerTrench | |||||
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10,645
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.8 A | 170 mOhms | Enhancement | ||||||
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26,110
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
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886
In-stock
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Fairchild Semiconductor | MOSFET SupreMOS 16A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 170 mOhms | Enhancement | SupreMOS | |||||
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743
In-stock
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Fairchild Semiconductor | MOSFET SupreMOS 16A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 170 mOhms | Enhancement | SupreMOS | |||||
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113,700
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
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3,400
In-stock
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IR / Infineon | MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC | 20 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 14 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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3,370
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 18.5A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24.8 A | 170 mOhms | 2.5 V | 47.2 nC | Enhancement | CoolMOS | |||
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6,610
In-stock
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IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | ||||||
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5,085
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | +/- 20 V | Through Hole | TO-251-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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5,686
In-stock
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IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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10,679
In-stock
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IR / Infineon | MOSFET MOSFT 20V 3.2A 100mOhm 4.7nC LogLvl | 12 V | SMD/SMT | Micro-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 170 mOhms | 0.7 V | 4.7 nC | |||||
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1,868
In-stock
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IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | ||||||
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850
In-stock
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IXYS | MOSFET 500V 36A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | Enhancement | HyperFET | |||||
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2,772
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 170mOhms 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 26 nC | Enhancement | |||||
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GET PRICE |
16,840
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | ||||
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1,900
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | |||||
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1,531
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | ||||||
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632
In-stock
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Fairchild Semiconductor | MOSFET 20.2A 600V MOSFET | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 57 nC | SuperFET II | ||||
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350
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V, 170mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 170 mOhms | 3.5 V | 42 nC | SuperFET II | ||||
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329
In-stock
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IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | ||||||
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GET PRICE |
7,840
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | ||
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2,341
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 12 A | 170 mOhms | 3 V | 15.3 nC | Enhancement | StrongIRFET | |||
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678
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
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4,137
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | PQFN-6 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 170 mOhms | 1.9 nC | ||||||||
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480
In-stock
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IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | ||||||
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142
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 2.5A 170mOhm 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 5.5 V | 26 nC | Enhancement | ||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 20.2A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.2 A | 170 mOhms | 2.5 V | 73 nC | Enhancement | CoolMOS | |||
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114
In-stock
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IXYS | MOSFET 40 Amps 500V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 40 A | 170 mOhms | 4.5 V | 320 nC | Enhancement | Linear L2 | ||||
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5,455
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH -20V | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.9 A | 170 mOhms | Enhancement | PowerTrench |
