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19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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9,192
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 57A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 57 A | 5.2 mOhms | 12 nC | OptiMOS | |||||
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2,468
In-stock
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Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 145 A | 5.2 mOhms | Enhancement | PowerTrench | |||||
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3,738
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 5.2 mOhms | 2.5 V | 40 nC | Enhancement | ||||
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98
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 260 A | 5.2 mOhms | 5 V | 640 nC | Enhancement | HiPerFET | |||
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517
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 130 A | 5.2 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
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2,686
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 5.2 mOhms | PowerTrench | ||||||
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1,660
In-stock
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Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 145 A | 5.2 mOhms | Enhancement | PowerTrench | |||||
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3,996
In-stock
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Infineon Technologies | MOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.2 mOhms | 1.7 V | 29 nC | |||||
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908
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 5.2 mOhms | 2.1 V | 32 nC | Enhancement | ||||
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752
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 5.2 mOhms | 3.1 V | 51 nC | OptiMOS | ||||
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498
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 5.2 mOhms | Enhancement | ||||||
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8
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 240 A | 5.2 mOhms | 460 nC | Enhancement | HiPerFET | |||||
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87
In-stock
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STMicroelectronics | MOSFET N-Ch 55V 4.3mOhm 55V STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 110 A | 5.2 mOhms | 120 nC | ||||||||
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564
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 5.2 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | |||
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2,205
In-stock
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Toshiba | MOSFET N-Ch 30V 1370pF 24nC 6.3mOhm 43A 19W | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 5.2 mOhms | 1.3 V to 2.3 V | 24 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 130 A | 5.2 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
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VIEW | Toshiba | MOSFET UMOSVIII 60V 3.3m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 5.2 mOhms | |||||||||
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VIEW | Toshiba | MOSFET P-Ch MOS -80A -40V 100W 7770pF 0.0052 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 5.2 mOhms | ||||||||||
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870
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | GaN | N-Channel | 40 V | 70 A | 5.2 mOhms | Enhancement |
