- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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6,135
In-stock
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Fairchild Semiconductor | MOSFET 30/20V Nch PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 6.9 mOhms | Enhancement | PowerTrench | |||||
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929
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A TO220-3 OptiMOS-P2 | + 5 V, - 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 6.9 mOhms | - 2 V | 63 nC | Enhancement | OptiMOS | |||
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648
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.9 mOhms | 2.2 V | 42 nC | Enhancement | ||||
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10
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 98 A | 6.9 mOhms | 1.4 V | 53.7 nC | Enhancement | ||||
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1,876
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 5 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 6.9 mOhms | 63 nC | OptiMOS | |||||
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1,500
In-stock
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onsemi | MOSFET NFET SO8FL 40V 40A 7.5MOH | SMD/SMT | DFN-5x6-8 | Reel | Si | N-Channel | 40 V | 44 A | 6.9 mOhms | |||||||||||
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556,120
In-stock
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Toshiba | MOSFET MOSFET NCh 6.9ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 80 V | 46 A | 6.9 mOhms | 2 V to 4 V | 37 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-Ch -30V FET 4800pF -16A 1.9W | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16 A | 6.9 mOhms |
