- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
45 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,643
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 22 nC | Enhancement | OptiMOS | |||
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GET PRICE |
390,400
In-stock
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onsemi | MOSFET -40V P-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 32 A | 27 mOhms | Enhancement | PowerTrench | ||||
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4,225
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 32 A | 27 mOhms | Enhancement | QFET | |||||
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1,121
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel PowerTrench | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 27 mOhms | Enhancement | PowerTrench | |||||
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2,517
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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7,959
In-stock
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onsemi | MOSFET 20V 6A P-Channel | 12 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 7.8 A | 27 mOhms | Enhancement | ||||||
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8,767
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 5.4A/- 7.1A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 5.4 A | 27 mOhms | 6.3 nC | ||||||
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2,518
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 27mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 42 A | 27 mOhms | 32 nC | Enhancement | ||||||
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4,171
In-stock
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Fairchild Semiconductor | MOSFET 30V Single NCh Logic Level PowerTrench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.1 A | 27 mOhms | Enhancement | PowerTrench | |||||
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3,261
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS P-Ch 40V 8.4A 3-Pin 2+Tab | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 32 A | 27 mOhms | Enhancement | PowerTrench | |||||
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4,691
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 23A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 23 A | 27 mOhms | 2 V | 9.1 nC | Enhancement | OptiMOS | |||
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2,807
In-stock
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onsemi | MOSFET 30V 20A N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 27 mOhms | Enhancement | ||||||
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1,533
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 37 A | 27 mOhms | 43.3 nC | Enhancement | |||||
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3,593
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 23A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 23 A | 27 mOhms | 2 V | 9.1 nC | Enhancement | OptiMOS | |||
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4,753
In-stock
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Nexperia | MOSFET PMN27XPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.7 A | 27 mOhms | - 1 V | 15 nC | Enhancement | |||||
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629
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 37 A | 27 mOhms | 43.3 nC | Enhancement | |||||
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3,858
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.6 A | 27 mOhms | - 950 mV | 22.1 nC | Enhancement | ||||
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1,056
In-stock
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IR / Infineon | MOSFET MOSFT 55V 37A 27mOhm 43.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 37 A | 27 mOhms | 4 V | 65 nC | |||||
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50
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | |||
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1,156
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 37A 27mOhm 43.3nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 37 A | 27 mOhms | 43.3 nC | ||||||||
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92
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | |||
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2,641
In-stock
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Diodes Incorporated | MOSFET N-Ch 24Vds 12Vgs 6.0A Enh FET 2564pF | 12 V | SMD/SMT | X1-WLB1818-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 24 V | 6 A | 27 mOhms | 1.3 V | 29 nC | Enhancement | ||||
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24
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 120 A | 27 mOhms | 3 V | 150 nC | Enhancement | HyperFET | |||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 27 mOhms | 1.5 V | 20 nC | Enhancement | ||||
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325
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 8Vgss -7.6A ID 0.7W | +/- 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.6 A | 27 mOhms | - 1 V | 27 nC | Enhancement | ||||
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22
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | Enhancement | ||||||
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3,144
In-stock
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Texas instruments | MOSFET Dual P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 2.4 A | 27 mOhms | - 800 mV | 2.9 nC | NexFET | |||||
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2,580
In-stock
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Texas instruments | MOSFET 20V P-channel NexFET Pwr MOSFET | +/- 8 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 27 mOhms | - 1.15 V | 4.4 nC | Enhancement | NexFET | |||
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445
In-stock
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Texas instruments | MOSFET 60V Dual NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 27 mOhms | 3 V | 7.2 nC | Enhancement | ||||
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23,500
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 27 mOhms | 2 V | 29 nC | Enhancement |
