- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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480
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V Fast ver | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 75 A | 43 mOhms | 3.5 V | 163 nC | Enhancement | SuperFET II | |||
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431
In-stock
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Fairchild Semiconductor | MOSFET UniFET 500V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 100 A | 43 mOhms | Enhancement | UniFET | |||||
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327
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 63.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 63.3 A | 43 mOhms | 3.5 V | 270 nC | Enhancement | CoolMOS | |||
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6,498
In-stock
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Fairchild Semiconductor | MOSFET -20V P-Channel 2.5V PowerTrench MOSFET | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 43 mOhms | Enhancement | PowerTrench | |||||
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4,048
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 25 A | 43 mOhms | 33.5 nC | ||||||
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2,476
In-stock
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onsemi | MOSFET NFET DPAK 100V 23A 56MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 43 mOhms | 1 V | 35 nC | Enhancement | ||||
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1,989
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 43 mOhms | 13 nC | ||||||
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5,956
In-stock
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onsemi | MOSFET P-CH Pwr MOSFET 30V 6A 43 mOhm | SOT-26-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 43 mOhms | |||||||||||
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1,180
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | ||||
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75
In-stock
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IXYS | MOSFET Trench HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 43 mOhms | 5 V | 180 nC | Enhancement | Trench, HiperFET | |||
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25
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 120 A | 43 mOhms | Polar2 HiPerFET | ||||||
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3,833
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIES | SOT-363-6 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5 A | 43 mOhms | |||||||||||
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9
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 300V 86A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 86 A | 43 mOhms | 5 V | 180 nC | Enhancement | Trench, HiperFET | ||||
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710
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6 A | 43 mOhms | 20 nC | ||||||
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VIEW | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | SMD/SMT | SMPD-24 | Tube | Si | N-Channel | 500 V | 63 A | 43 mOhms | HiPerFET | ||||||||||
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VIEW | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-264-3 | Tube | Si | N-Channel | 500 V | 63 A | 43 mOhms | HyperFET | ||||||||||
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VIEW | Infineon Technologies | MOSFET 55V 25A 43 mOhm Auto Logic Level MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 13.3 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 63.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 63.3 A | 43 mOhms | 3.5 V | 270 nC | Enhancement | CoolMOS | |||
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VIEW | onsemi | MOSFET SWITCHING DEVICE | SOT-363-6 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5 A | 43 mOhms | |||||||||||
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140
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.035 Ohm 68A MDmesh II FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 43 A | 43 mOhms | 4 V | 178 nC | |||||||
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857
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 43mOhms 25nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 5.1 A | 43 mOhms | 3 V to 5 V | 25 nC | Enhancement | ||||
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16
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET 55V 25A 43 mOhm Auto Logic Level MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 13.3 nC |
