- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DFN-6 (1)
- DirectFET-L8 (1)
- DirectFET-MC (1)
- DirectFET-MZ (1)
- Power-56-8 (1)
- PowerDI3333-8 (8)
- PQFN-8 (2)
- SO-8 (11)
- SO-FL-8 (1)
- SOIC-8 (1)
- TDSON-8 (4)
- TO-220-3 (11)
- TO-247-3 (6)
- TO-251-3 (1)
- TO-252-3 (25)
- TO-262-3 (1)
- TO-263-3 (3)
- TO-264-3 (4)
- TO-268-3 (2)
- TO-3P-3 (1)
- TSDSON-8 (4)
- TSON-Advance-8 (1)
- VSONP-8 (1)
- WLCSP-6 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 13 A (1)
- - 14 A (1)
- - 140 A (3)
- - 40 A (6)
- - 45 A (1)
- - 9.8 A (3)
- 10.4 A (1)
- 100 A (4)
- 11.5 A (1)
- 110 A (3)
- 12 A (1)
- 12.5 A (1)
- 120 A (1)
- 13 A (1)
- 13.3 A (2)
- 13.5 A (1)
- 130 A (2)
- 133 A (1)
- 14 A (2)
- 140 A (3)
- 141 A (1)
- 15 A (2)
- 16 A (3)
- 160 A (1)
- 170 A (6)
- 180 A (1)
- 21 A (1)
- 220 A (1)
- 3.1 A (2)
- 30 A (1)
- 40 A (3)
- 47 A (1)
- 5.8 A (1)
- 50 A (6)
- 58 A (1)
- 59 A (1)
- 60 A (2)
- 67 A (2)
- 75 A (1)
- 76 A (1)
- 77 A (3)
- 80 A (5)
- 82 A (1)
- 9 A (1)
- 9.5 A (1)
- 9.8 A (2)
- 97 A (3)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 100 nC (1)
- 120 nC (1)
- 140 nC (1)
- 156 nC (1)
- 162 nC (1)
- 180 nC (1)
- 198 nC (2)
- 200 nC (2)
- 235 nC (1)
- 24 nC (1)
- 253 nC (1)
- 260 nC (1)
- 27 nC (2)
- 28 nC (1)
- 30 nC (2)
- 33 nC (2)
- 35 nC (1)
- 36 nC (1)
- 37 nC (2)
- 41 nC (4)
- 42 nC (3)
- 43 nC (2)
- 45 nC (5)
- 45.7 nC (2)
- 5.4 nC (1)
- 56 nC (3)
- 57 nC (1)
- 58 nC (1)
- 62 nC (1)
- 64 nC (1)
- 65 nC (1)
- 66.7 nC (3)
- 7.1 nC (1)
- 83 nC (3)
- 85 nC (1)
- 93.3 nC (3)
- 97 nC (1)
- Applied Filters :
93 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,282
In-stock
|
Fairchild Semiconductor | MOSFET 20V N-Ch PowerTrench | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 50 A | 9 mOhms | Enhancement | PowerTrench | |||||
|
|
4,703
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 2 V | 33 nC | Enhancement | OptiMOS | |||
|
|
7,133
In-stock
|
Fairchild Semiconductor | MOSFET 40/20V Nch Power Trench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14 A | 9 mOhms | Enhancement | PowerTrench | |||||
|
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3,406
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 25 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 9 mOhms | Enhancement | PowerTrench | |||||
|
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3,029
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 | - 20 V, + 30 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12.5 A | 9 mOhms | Enhancement | PowerTrench | |||||
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2,290
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 9 mOhms | 2 V | 57 nC | Enhancement | PowerTrench | |||
|
|
6,236
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 9 mOhms | 2 V to 4 V | 65 nC | Enhancement | ||||
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|
526
In-stock
|
IXYS | MOSFET -140 Amps -50V 0.008 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 140 A | 9 mOhms | - 4 V | 200 nC | Enhancement | TrenchP | |||
|
|
671
In-stock
|
IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
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2,633
In-stock
|
Infineon Technologies | MOSFET 100V 97A 9mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 9 mOhms | 2 V to 4 V | 83 nC | Enhancement | ||||
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4,375
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 76 A | 9 mOhms | 3 V | 35 nC | Enhancement | OptiMOS | |||
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10,835
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 9 mOhms | Enhancement | OptiMOS | |||||
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2,443
In-stock
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IR / Infineon | MOSFET MOSFT 40V 77A 9mOhm 30nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 77 A | 9 mOhms | 4 V | 45 nC | |||||||
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2,615
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 9 mOhms | 62 nC | Enhancement | |||||
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8,520
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 9 mOhms | Enhancement | ||||||
|
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3,032
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 82A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 82 A | 9 mOhms | 2.2 V | 27 nC | Enhancement | ||||
|
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3,854
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58 A | 9 mOhms | Enhancement | PowerTrench | |||||
|
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2,331
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -45A TO220-3 OptiMOS-P2 | + 5 V, - 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 45 A | 9 mOhms | - 1.5 V | 42 nC | Enhancement | OptiMOS | |||
|
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1,888
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-CH POWER TRENCH SYNCFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13.5 A | 9 mOhms | Enhancement | PowerTrench SyncFET | |||||
|
|
786
In-stock
|
Fairchild Semiconductor | MOSFET 100V 75A N-Chan PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 9 mOhms | Enhancement | PowerTrench | |||||
|
|
2,940
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 15A 7.5mOhm 37nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 9 mOhms | 37 nC | ||||||||
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|
775
In-stock
|
Infineon Technologies | MOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 9 mOhms | 66.7 nC | ||||||||
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3,860
In-stock
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onsemi | MOSFET NFET SO8 30V 9.9A 12.5mOhm | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 9 mOhms | Enhancement | ||||||
|
|
965
In-stock
|
IR / Infineon | MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 67 A | 9 mOhms | 24 nC | Enhancement | Directfet | ||||
|
|
5,044
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | OptiMOS | |||
|
|
2,615
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 29nC | +/- 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 85 nC | Enhancement | PowerDI | |||
|
|
800
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 9 mOhms | 93.3 nC | Enhancement | |||||
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105
In-stock
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IXYS | MOSFET 133 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 133 A | 9 mOhms | 5 V | 235 nC | Enhancement | Polar, HiPerFET | |||
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4,230
In-stock
|
onsemi | MOSFET NFET SO8FL 30V | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 9 mOhms | |||||||
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1,320
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | Enhancement | OptiMOS |
