- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 107 nC (1)
- 118 nC (1)
- 130 nC (1)
- 133 nC (1)
- 135 nC (5)
- 155 nC (1)
- 160 nC (6)
- 180 nC (1)
- 193 nC (1)
- 21 nC, 44 nC (1)
- 23 nC (2)
- 26 nC (1)
- 35 nC (2)
- 46.9 nC (1)
- 47 nC (1)
- 49 nC (2)
- 52 nC (1)
- 54 nC (2)
- 55 nC (2)
- 58 nC (1)
- 61 nC (2)
- 63.4 nC (2)
- 68.6 nC (1)
- 72 nC (1)
- 73 nC (2)
- 75 nC (2)
- 79 nC (2)
- 800 nC (1)
- Applied Filters :
58 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Fall Time | Package | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | RoHS | |
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86,200
In-stock
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Toshiba | MOSFET Pb-F POWER MOSFET TRANSISTOR DOSP-ADV... | 20 V | + 150 C | Tape & Reel (TR) | 142 W | N-Channel | 75 V | 170 A | 2.5 mOhms | 2 V | 72 nC | 15 ns | QFN-8 | 56 ns | 30 ns | 100% Green available | ||||||||||
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2,480
In-stock
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STMicroelectronics | MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power M... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.5 mOhms | 3 V | 130 nC | Enhancement | ||||||||||
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685
In-stock
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Vishay Semiconductors | MOSFET P Ch -40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.5 mOhms | - 2.5 V | 800 nC | Enhancement | ||||||||||
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6,105
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 55 nC | Enhancement | OptiMOS | |||||||||
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3,507
In-stock
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Fairchild Semiconductor | MOSFET 30V 42A 2.5mohms NCh PowerTrench MOSFET | SMD/SMT | Power-56-8 | + 150 C | Reel | Si | N-Channel | 30 V | 26 A | 2.5 mOhms | PowerTrench | |||||||||||||||
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4,836
In-stock
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Fairchild Semiconductor | MOSFET PT7 30/20V Nch PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 42 A | 2.5 mOhms | PowerTrench SyncFET | ||||||||||||
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2,954
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | SMD/SMT | Power-33-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 49 A | 2.5 mOhms | 21 nC, 44 nC | ||||||||||||||
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3,890
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 75 A | 2.5 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | |||||||||
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12,490
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | |||||||||
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GET PRICE |
61,440
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 98 A | 2.5 mOhms | 1.2 V | 35 nC | Enhancement | |||||||||
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11,035
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 61 nC | Enhancement | OptiMOS | |||||||||
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1,809
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | Enhancement | OptiMOS | |||||||||||
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1,128
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 3mOhms 160nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 230 A | 2.5 mOhms | 160 nC | ||||||||||||||
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737
In-stock
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Infineon Technologies | MOSFET 75V 230A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 260 A | 2.5 mOhms | 160 nC | ||||||||||||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.5 mOhms | 2.5 V | 160 nC | Enhancement | ||||||||||
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6,985
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 55 nC | Enhancement | OptiMOS | |||||||||
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1,090
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | 2.2 V | 133 nC | Enhancement | ||||||||||
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4,541
In-stock
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IR / Infineon | MOSFET 20V DUAL N / P CH 2.5mOhms 26nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 26 nC | ||||||||||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | |||||||||
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748
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.5 mOhms | Enhancement | PowerTrench | |||||||||||
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388
In-stock
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IR / Infineon | MOSFET MOSFT 75V 230A 3mOhm 160nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 230 A | 2.5 mOhms | 160 nC | ||||||||||||||
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1,400
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 1.2 V | 79 nC | Enhancement | OptiMOS | |||||||||
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2,486
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 2.5 mOhms | 1 V | 75 nC | Enhancement | ||||||||||
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2,000
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 2.5 mOhms | 1.35 V | 54 nC | Enhancement | StrongIRFET | |||||||||
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100
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 265 A | 2.5 mOhms | Enhancement | PowerTrench | |||||||||||
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33,600
In-stock
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Infineon Technologies | MOSFET 40V 120A 2.5 mOhm HEXFET 90nC 208W | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 135 nC | Enhancement | StrongIRFET | ||||||||||||
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555
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 2.5 mOhms | 1.35 V | 54 nC | Enhancement | StrongIRFET | |||||||||
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GET PRICE |
4,110
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.9mOhm 120A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | ||||||||
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536
In-stock
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Infineon Technologies | MOSFET MOSFET, 40V, 120A, 2 90 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 135 nC | Enhancement | StrongIRFET | ||||||||||||
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779
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 68.6 nC | Enhancement |
