- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
38 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Forward Transconductance - Min | Rise Time | Fall Time | Package | Factory Pack Quantity | RoHS | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
7,650
In-stock
|
Infineon Technologies | MOSFET TRENCH <= 40V | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 83 W | N-Channel | 40 V | 40 A | 2.1 mOhms | 2.3 V | 31 nC | 110 S | 1.6 ns | 4 ns | TSDSON-FL-8 | 5000 | Green available | |||||||||||
|
3,206
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.1 mOhms | 2.1 V | 83 nC | Enhancement | ||||||||||||
|
657
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.1 mOhms | 2.3 V | 206 nC | Enhancement | OptiMOS | |||||||||||
|
4,286
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 29 nC | ||||||||||||||||
|
3,250
In-stock
|
Infineon Technologies | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | 12 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 100 A | 2.1 mOhms | 700 mV | 52.7 nC | Enhancement | OptiMOS | |||||||||||
|
45,490
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 160A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 106 A | 2.1 mOhms | 1.7 V | 47.9 nC | |||||||||||||
|
6,413
In-stock
|
IR / Infineon | MOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.1 mOhms | 1.35 V to 2.35 V | 30 nC | Enhancement | ||||||||||||
|
512
In-stock
|
STMicroelectronics | MOSFET N-CH 80V 17mOhm 180A STripFET VII | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 2.1 mOhms | 2 V | 193 nC | Enhancement | ||||||||||||
|
726
In-stock
|
STMicroelectronics | MOSFET N-CH 80V 17mOhm 180A STripFET VII | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 2.1 mOhms | 2 V | 193 nC | Enhancement | ||||||||||||
|
4,930
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 1 V | 74 nC | Enhancement | OptiMOS | |||||||||||
|
2,768
In-stock
|
IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 40nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 180 A | 2.1 mOhms | 1.9 V | 40 nC | Directfet | ||||||||||||
|
816
In-stock
|
Fairchild Semiconductor | MOSFET 40V NCHAN PwrTrench | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.1 mOhms | ||||||||||||||||
|
439
In-stock
|
Fairchild Semiconductor | MOSFET 40V 100A 2.1mOhm N-Chan Power Trench | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 30 A | 2.1 mOhms | Enhancement | PowerTrench | |||||||||||||
|
775
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-CHAN PwrTrench | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.1 mOhms | PowerTrench | |||||||||||||||
|
714
In-stock
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 1.2 V | 45 nC | Enhancement | ||||||||||||
|
1,179
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 1 V | 74 nC | Enhancement | OptiMOS | |||||||||||
|
301
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 270A 2.5mOhm 200nC Qg | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 60 V | 270 A | 2.1 mOhms | 200 nC | |||||||||||||||||
|
150
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.1 mOhms | 2.1 V | 83 nC | Enhancement | OptiMOS | |||||||||||
|
373
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 2 V | 90 nC | Enhancement | OptiMOS | |||||||||||
|
165
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 2.1 mOhms | 2.3 V | 206 nC | Enhancement | OptiMOS | |||||||||||
|
625
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.1 mOhms | 91 nC | OptiMOS | |||||||||||||
|
27
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.1 mOhms | 2 V | 167 nC | Enhancement | ||||||||||||
|
50,000
In-stock
|
Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 5 A | 2.1 mOhms | 1.1 V | 14 nC | Enhancement | NexFET | |||||||||||
|
2,568
In-stock
|
Toshiba | MOSFET Power MOSFET N-Channel Single | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 150 A | 2.1 mOhms | 2 V | 72 nC | Enhancement | ||||||||||||
|
2,089
In-stock
|
Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=132W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 150 A | 2.1 mOhms | 1.4 V | 74 nC | Enhancement | ||||||||||||
|
1,000
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.6mOhms 160nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 260 A | 2.1 mOhms | 4 V | 160 nC | |||||||||||||
|
10,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 2.1 mOhms | 2.2 V | 41 nC | OptiMOS | ||||||||||||
|
1,240
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 260A 2.6mOhm 160nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 260 A | 2.1 mOhms | 160 nC | ||||||||||||||||
|
399
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 270A 2.5mOhm 200nCAB | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 60 V | 270 A | 2.1 mOhms | 200 nC | |||||||||||||||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 2 V | 90 nC | Enhancement |