- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DSBGA-6 (1)
- ISOPLUS-i4-PAK-5 (1)
- MicroFET-6 (1)
- Power-33-8 (5)
- Power-56-8 (3)
- PQFN-8 (1)
- SMPD-24 (1)
- SO-8 (18)
- SOIC-8 (1)
- SOT-227-4 (2)
- SOT-23-3 (2)
- SOT-26-6 (1)
- TDSON-8 (2)
- TO-220-3 (6)
- TO-220FP-3 (1)
- TO-247-3 (6)
- TO-252-3 (17)
- TO-262-3 (2)
- TO-263-3 (4)
- TO-264-3 (2)
- TO-268-3 (2)
- TSOT-26-6 (1)
- U-DFN2020-E-6 (2)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 10 A (2)
- - 27 A (1)
- - 40 A (1)
- - 56 A (1)
- - 6.7 A (1)
- - 7.5 A (1)
- - 70 A (2)
- - 74 A (7)
- - 8 A (1)
- - 8.5 A (3)
- - 8.8 A (1)
- - 9 A (1)
- - 9.1 A (1)
- - 9.4 A (1)
- 10 A (5)
- 102 A (1)
- 106 A (1)
- 110 A (1)
- 12.4 A (2)
- 120 A (2)
- 140 A (1)
- 18 A (1)
- 21 A (1)
- 23 A (1)
- 27 A (1)
- 28 A (2)
- 3.5 A (1)
- 30 A (2)
- 35 A (2)
- 36 A (1)
- 40 A (2)
- 41 A (2)
- 48 A (1)
- 49 A (1)
- 5.5 A (1)
- 50 A (1)
- 53 A (1)
- 6 A (2)
- 6.2 A (1)
- 6.4 A (2)
- 6.5 A (1)
- 60A (1)
- 7 A (1)
- 70 A (1)
- 75 A (5)
- 76 A (2)
- 8 A (2)
- 8.6 A (3)
- 80 A (2)
- 9 A (1)
- 9.8 A (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (1)
- 10.5 nC (1)
- 100 nC (1)
- 11.6 nC (1)
- 12.6 nC (1)
- 120 nC (7)
- 13.4 nC (1)
- 15.6 nC (3)
- 150 nC (1)
- 18.6 nC (1)
- 180 nC (2)
- 185 nC (1)
- 19.1 nC (2)
- 21 nC (2)
- 22 nC (1)
- 3.9 nC (1)
- 30 nC (2)
- 31 nC (1)
- 35.4 nC (1)
- 39 nC (2)
- 40 nC (2)
- 40.7 nC (1)
- 44 nC (1)
- 48.7 nC (1)
- 61 nC (1)
- 7.5 nC, 15.7 nC (1)
- 7.7 nC (1)
- 8.3 nC (1)
- 8.7 nC (1)
- 9.6 nC (1)
- 92 nC (1)
- 95 nC (1)
- 97 nC (1)
- Applied Filters :
83 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
4,281
In-stock
|
Toshiba | N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, REL... | 20V | - 55 C | + 150 C | Tube | 200W | 100V | 60A | 20 mOhms | TO-3P | 100% Green available | ||||||||||||
|
|
19,249
In-stock
|
Fairchild Semiconductor | MOSFET 30V P-Channel PowerTrench | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 20 mOhms | Enhancement | PowerTrench | ||||||||
|
|
8,000
In-stock
|
IR / Infineon | MOSFET Automotive MOSFET P 75A 120nC D2Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 70 A | 20 mOhms | - 4 V | 120 nC | ||||||||
|
|
5,467
In-stock
|
Fairchild Semiconductor | MOSFET -30V P-Channel PowerTrench | 25 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.5 A | 20 mOhms | Enhancement | PowerTrench | ||||||||
|
|
5,962
In-stock
|
Fairchild Semiconductor | MOSFET P-CHAN -20V -9.4A | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.4 A | 20 mOhms | PowerTrench | ||||||||||
|
|
7,868
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 30 nC | Enhancement | ||||||||
|
|
4,979
In-stock
|
Fairchild Semiconductor | MOSFET 30V 9A N-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 20 mOhms | Enhancement | PowerTrench | ||||||||
|
|
4,980
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.5 A | 20 mOhms | Enhancement | PowerTrench SyncFET | ||||||||
|
|
14,500
In-stock
|
Fairchild Semiconductor | MOSFET PT8P 20_8V from vanguard | 8 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 56 A | 20 mOhms | - 400 mV | 44 nC | Enhancement | PowerTrench | ||||||
|
|
6,144
In-stock
|
Fairchild Semiconductor | MOSFET P-Channel PowerTrench MOSFET | SMD/SMT | Power-56-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 20 mOhms | PowerTrench | |||||||||||
|
|
5,870
In-stock
|
Fairchild Semiconductor | MOSFET 30V Dual N-Channel PowerTrench MOSFET | SMD/SMT | Power-33-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 18 A | 20 mOhms | 7.5 nC, 15.7 nC | PowerTrench SyncFET | ||||||||||
|
|
3,755
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||||||
|
|
5,356
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 20 mOhms | Enhancement | PowerTrench | ||||||||
|
|
2,423
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 16 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 20 mOhms | Enhancement | |||||||||
|
|
2,173
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 20 mOhms | 4 V | 31 nC | Enhancement | OptiMOS | ||||||
|
|
GET PRICE |
177,900
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 76A 20mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 76 A | 20 mOhms | 100 nC | Enhancement | |||||||
|
|
1,268
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 110 A | 20 mOhms | 4 V | 95 nC | PowerTrench | ||||||||
|
|
4,557
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20 mOhms | 1.2 V | 39 nC | Enhancement | OptiMOS | ||||||
|
|
4,624
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1 V | 30 nC | Enhancement | |||||||
|
|
3,730
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 20 mOhms | 40.7 nC | |||||||||||
|
|
4,425
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||||||
|
|
3,217
In-stock
|
Fairchild Semiconductor | MOSFET 30V SinGLE P-Ch | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.8 A | 20 mOhms | Enhancement | PowerTrench | ||||||||
|
|
2,755
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-CHAN PwrTrench 60V 36A 26mOhm | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 36 A | 20 mOhms | |||||||||||
|
|
GET PRICE |
157,000
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -55V -74A 20mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | 120 nC | ||||||||||
|
|
1,022
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | 120 nC | Enhancement | ||||||||
|
|
778
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -55V -74A 20mOhm 120nC | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 70 A | 20 mOhms | - 4 V | 180 nC | ||||||||||
|
|
1,021
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | |||||||
|
|
1,873
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 30 Amp | 20 V | SMD/SMT | TO-252-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 20 mOhms | Enhancement | |||||||||
|
|
5,255
In-stock
|
Diodes Incorporated | MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 20 mOhms | 2.4 V | 19.1 nC | Enhancement | |||||||
|
|
3,968
In-stock
|
onsemi | MOSFET NFET SO8 30V 8A TR 0.020R | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.4 A | 20 mOhms | 7.7 nC | Enhancement |
