- Vgs - Gate-Source Voltage :
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29 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
15,800
In-stock
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NXP Semiconductors | MOSFET BUK7K6R8-40E/SOT1205/LFPAK56D | - 20 V, + 20 V | Tape & Reel (TR) | 2 Channel | 64 W | N-Channel | 40 V | 40 A | 5.8 mOhms | 3 V | 28.9 nC | LFPAK-56D-8 | 1500 | Green available | ||||||||||
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29,260
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 100 A | 5.8 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||||||||
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2,930
In-stock
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Fairchild Semiconductor | MOSFET 25V 28A 5.8mOhm N-Ch PowerTrench | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 28 A | 5.8 mOhms | 1.6 V | PowerTrench | |||||||||||
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2,400
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 5.8 mOhms | 1.1 V | 98 nC | Enhancement | |||||||||
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10,000
In-stock
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STMicroelectronics | MOSFET N Ch 40V 5.4mOhm 80A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 5.8 mOhms | Enhancement | |||||||||||
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3,275
In-stock
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onsemi | MOSFET NFET SO8FL 30V 52A 5.8MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 52 A | 5.8 mOhms | 2.1 V | 18.2 nC | ||||||||||
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711
In-stock
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onsemi | MOSFET P-CH Pwr MOSFET 60V 100A 5.8mOhm | TO-262-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 100 A | 5.8 mOhms | ||||||||||||||||
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410
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 128 A | 5.8 mOhms | 4 V | 110 nC | ||||||||||||
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2,821
In-stock
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onsemi | MOSFET NFET SO8FL 30V 46A 6.96MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 5.8 mOhms | 1.3 V | 18.6 nC | Enhancement | |||||||||
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1,720
In-stock
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IR / Infineon | MOSFET MOSFT 85A 5.8mOhm 30V 15nC Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 5.8 mOhms | 2.35 V | 15 nC | ||||||||||||
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226
In-stock
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Infineon Technologies | MOSFET TEMPFET | 20 V | Through Hole | TO-220-7 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 49 V | 80 A | 5.8 mOhms | 1.2 V | 232 nC | Enhancement | |||||||||
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205
In-stock
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onsemi | MOSFET NFET 40V 116A PB | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 116 A | 5.8 mOhms | Enhancement | |||||||||||
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600
In-stock
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IR / Infineon | MOSFET N-CHANNEL 55 / 60 | SMD/SMT | TO-251-3 | Tube | Si | N-Channel | 55 V | 91 A | 5.8 mOhms | ||||||||||||||||
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GET PRICE |
12,419
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.8 mOhms | 1.8 V | 36 nC | NexFET | ||||||||
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1,080
In-stock
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Texas instruments | MOSFET DualCool N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 5.8 mOhms | 1.1 V | 6.8 nC | NexFET | |||||||||
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GET PRICE |
7,200
In-stock
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Toshiba | MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | 20 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 120 V | 112 A | 5.8 mOhms | 2 V to 4 V | 69 nC | Enhancement | |||||||||||
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1,395
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 5.8 mOhms | Enhancement | OptiMOS | ||||||||||
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474
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 5.8 mOhms | 2.1 V | 180 nC | Enhancement | OptiMOS | ||||||||
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6,000
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14 A | 5.8 mOhms | 15 nC, 30 nC | Enhancement | PowerTrench | |||||||||
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GET PRICE |
30,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 100 A | 5.8 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 80V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 60 A | 5.8 mOhms | 1.5 V | 75 nC | Enhancement | |||||||||
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1,150
In-stock
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Texas instruments | MOSFET 60V N-channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.8 mOhms | 1.5 V | 36 nC | Enhancement | NexFET | ||||||||
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VIEW | Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 5.8 mOhms | 4 V | 79 nC | ||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 5.8 mOhms | 2.1 V | 180 nC | Enhancement | |||||||||
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VIEW | Infineon Technologies | MOSFET MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 5.8 mOhms | 1.1 V | 98 nC | Enhancement | |||||||||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 70 A | 5.8 mOhms | Enhancement | |||||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 40V 5.0mOhm 80A STripFET III | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 5.8 mOhms | 40 nC | Enhancement | ||||||||||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 60V 75A Rdson=0.0058Ohm | 20 V | SMD/SMT | TFP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 5.8 mOhms | Enhancement | |||||||||||
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VIEW | IR / Infineon | MOSFET | SMD/SMT | TO-251-3 | Tube | Si | N-Channel | 55 V | 91 A | 5.8 mOhms |