- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Applied Filters :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,799
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13.6 A | 6.7 mOhms | Enhancement | PowerTrench | |||||
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17,117
In-stock
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onsemi | MOSFET Single N-Channel 40V,40A,6.5mOhm | SMD/SMT | WDFN-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 6.7 mOhms | |||||||||
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2,947
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 16.4 A | 6.7 mOhms | Enhancement | PowerTrench | |||||
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1,314
In-stock
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Fairchild Semiconductor | MOSFET 150V N-CHANNEL POWERTRENCH MOSFET | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 105 A | 6.7 mOhms | 4 V | 64.5 nC | PowerTrench | ||||||
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7,413
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 6.7 mOhms | 1 V | 21 nC | Enhancement | OptiMOS | |||
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3,963
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.7 mOhms | 1.2 V | 29 nC | Enhancement | OptiMOS | |||
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8,251
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 6.7 mOhms | 1 V | 27 nC | Enhancement | OptiMOS | |||
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1,890
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | 20 V | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.7 mOhms | Enhancement | OptiMOS | ||||||
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1,904
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14.9 A | 6.7 mOhms | - 1.2 V | - 88 nC | Enhancement | OptiMOS | |||
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1,442
In-stock
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Infineon Technologies | MOSFET 25V SINGLE N-CH 20V VGS HEXFET | 20 V | SMD/SMT | DirectFET-SQ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 17 A | 6.7 mOhms | 1.9 V | 12 nC | Directfet | ||||
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4,720
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 6.7 mOhms | 1 V | 21 nC | Enhancement | OptiMOS | |||
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3,377
In-stock
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IR / Infineon | MOSFET 25V 12nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 19 A | 6.7 mOhms | 1.8 V | 18 nC | SmallPowIR | ||||
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1,745
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.7 mOhms | 1.2 V | 29 nC | Enhancement | OptiMOS | |||
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410
In-stock
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onsemi | MOSFET PFET U8FL 20V 14A 6.7MOHM | SMD/SMT | WDFN-8 | Reel | Si | P-Channel | - 20 V | - 14 A | 6.7 mOhms | |||||||||||
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511
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 85 A | 6.7 mOhms | 3.7 V | 85 nC | StrongIRFET | ||||
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110
In-stock
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onsemi | MOSFET PFET U8FL 20V 14A 6.7MOHM | SMD/SMT | WDFN-8 | Reel | Si | P-Channel | - 20 V | - 14 A | 6.7 mOhms | |||||||||||
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2,888
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 17 A | 6.7 mOhms | PowerTrench | |||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 6.7 mOhms | 1 V | 27 nC | Enhancement | OptiMOS | |||
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2,500
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14.9 A | 6.7 mOhms | - 1.2 V | - 88 nC | Enhancement | ||||
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VIEW | onsemi | MOSFET Single N-Channel 40V,40A,6.5mOhm | SMD/SMT | WDFN-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 6.7 mOhms | |||||||||
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VIEW | onsemi | MOSFET Pwr MOSFET 40V 40A 6.7mOhm SGL N-CH | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 6.7 mOhms | |||||||||||
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1,824
In-stock
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IR / Infineon | MOSFET 60V SINGLE N-CH 6.7mOhms 40nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 89 A | 6.7 mOhms | 4 V | 40 nC | Enhancement | ||||
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292
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 85 A | 6.7 mOhms | 3.7 V | 85 nC | StrongIRFET | ||||
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140
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 6.7 mOhms | Enhancement | OptiMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.7 mOhms | Enhancement | OptiMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 80V 80A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.7 mOhms | CoolMOS |
