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31 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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555
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 480 A | 1.5 mOhms | 5 V | 545 nC | Enhancement | HiPerFET | ||||
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2,864
In-stock
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Fairchild Semiconductor | MOSFET 25/12V Dual Cool PowerTrench MOSFET | SMD/SMT | Power-56-8 | Reel | 2 Channel | Si | N-Channel | 25 V | 38 A | 1.5 mOhms | PowerTrench SyncFET | ||||||||||
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1,919
In-stock
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Fairchild Semiconductor | MOSFET 30V N-CH Logic Level PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 1.5 mOhms | Enhancement | PowerTrench | ||||||
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436
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 293 A | 1.5 mOhms | 4 V | 200 nC | ||||||
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637
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | |||||
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3,468
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 150 nC | Enhancement | OptiMOS | ||||
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4,500
In-stock
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onsemi | MOSFET NFET SO8FL 30V 138A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 136 A | 1.5 mOhms | 1.3 V | 45.2 nC | Enhancement | |||||
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3,935
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | |||||
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4,071
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | |||||
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2,854
In-stock
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Fairchild Semiconductor | MOSFET PT8 30V/20V Nch PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 29 A | 1.5 mOhms | 1.7 V | 78 nC | Enhancement | PowerTrench SyncFET | ||||
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287
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | |||||
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434
In-stock
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IR / Infineon | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 44 A | 1.5 mOhms | Enhancement | |||||||
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22
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 600 A | 1.5 mOhms | 1.5 V | 590 nC | Enhancement | HiPerFET | ||||
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222
In-stock
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Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 353 A | 1.5 mOhms | 160 nC | Enhancement | |||||||
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93
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.5 mOhms | OptiMOS | ||||||||||
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GET PRICE |
26,290
In-stock
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Texas instruments | MOSFET N-Channel NexFET Pwr MOSFET | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.5 V | 21 nC | NexFET | ||||
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4,725
In-stock
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Texas instruments | MOSFET 30V N Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.5 mOhms | 1.4 V | 39 nC | NexFET | |||||
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1,666
In-stock
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Texas instruments | MOSFET 25V NexFET N Ch Pwr MosFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.4 V | 37 nC | NexFET | |||||
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530
In-stock
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IR / Infineon | MOSFET MOSFT 60V 293A 2.1mOhm 200nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 60 V | 293 A | 1.5 mOhms | 200 nC | Enhancement | |||||||
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787
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 110 A | 1.5 mOhms | 3 V | 207 nC | PowerTrench | |||||
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4,992
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 57 nC | Enhancement | |||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 1.5 mOhms | 2.9 V | 187 nC | PowerTrench | |||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.5 mOhms | OptiMOS | ||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 35 A | 1.5 mOhms | Enhancement | OptiMOS | ||||||
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4,648
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 340 A | 1.5 mOhms | 160 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 57 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 150 nC | Enhancement | |||||
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70
In-stock
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Infineon Technologies | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.6 V | 55 nC | FastIRFet |