- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
30 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
32,976
In-stock
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onsemi | MOSFET SOT-223 P-CH ENHANCE | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 95 mOhms | Enhancement | |||||
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8,645
In-stock
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Fairchild Semiconductor | MOSFET 20V Dual P-Channel PowerTrench | +/- 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 95 mOhms | - 0.6 V | 5.5 nC | PowerTrench | ||||
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12,688
In-stock
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Fairchild Semiconductor | MOSFET -20V P-Channel PT MFET SCHOTTKY | - 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.1 A | 95 mOhms | Enhancement | PowerTrench | |||||
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372
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5 | Through Hole | TO-247-3 | Tube | Si | N-Channel | 650 V | 19 A | 95 mOhms | |||||||||||
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852
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5 | SMD/SMT | TO-263-3 | Reel | Si | N-Channel | 650 V | 19 A | 95 mOhms | |||||||||||
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6,040
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 N-CH 30V | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 2.5 A | 95 mOhms | Enhancement | PowerTrench | |||||
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3,500
In-stock
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IXYS | MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 5 V | 145 nC | HyperFET | ||||||
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270
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 30 A | 95 mOhms | 4 V | 71 nC | Enhancement | ||||
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2,256
In-stock
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Fairchild Semiconductor | MOSFET -20V P-Channel PowerTrench | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 95 mOhms | Enhancement | PowerTrench | |||||
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25,000
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2.9 A | 95 mOhms | Enhancement | PowerTrench | |||||
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6,373
In-stock
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Nexperia | MOSFET 40V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2.1 A | 95 mOhms | 1 V | 3.6 nC | Enhancement | ||||
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1,156
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 24A 95mOhm 30nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 24 A | 95 mOhms | 5 V | 45 nC | |||||||
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58
In-stock
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IXYS | MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 5 V | 145 nC | HyperFET | ||||||
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2,972
In-stock
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Diodes Incorporated | MOSFET 20V 3.5A P-CHNL | 12 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.5 A | 95 mOhms | Enhancement | ||||||
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2,996
In-stock
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Diodes Incorporated | MOSFET 20V 2.9A P-CHANNEL | 12 V | SMD/SMT | DFN3020-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.9 A | 95 mOhms | Enhancement | ||||||
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60
In-stock
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IXYS | MOSFET 500V 64A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 35 A | 95 mOhms | Enhancement | HyperFET | |||||
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51
In-stock
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Diodes Incorporated | MOSFET N Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.9 A | 95 mOhms | Enhancement | ||||||
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463
In-stock
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onsemi | MOSFET PFET FTKY S08 30V TR 3.8A | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 95 mOhms | Enhancement | ||||||
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417
In-stock
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STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 24 A | 95 mOhms | 4 V | 72 nC | ||||||
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27,000
In-stock
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Fairchild Semiconductor | MOSFET 30V/-30V N/P | 16 V, 25 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 2.5 A, - 2 A | 95 mOhms | Enhancement | PowerTrench | |||||
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4,000
In-stock
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onsemi | MOSFET 2.6A, 52V N-CH, CLAM | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 95 mOhms | 1.5 V | 4.5 nC | |||||
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5,000
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIES | SMD/SMT | SCH-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 95 mOhms | ||||||||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/64A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 190 nC | HyperFET | |||||||
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VIEW | onsemi | MOSFET 2.6A, 52V N-CH, CLAM | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 95 mOhms | 1.1 V | 4.5 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/64A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 190 nC | HyperFET | |||||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Transistr95ohm250V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 95 mOhms | 2 V to 4 V | 11 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5 | Through Hole | TO-220-3 | Tube | Si | N-Channel | 650 V | 19 A | 95 mOhms | |||||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5 | Through Hole | TO-220-3 | Tube | Si | N-Channel | 650 V | 19 A | 95 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET Vds=30V Id=2.2A 3Pin | 12 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.2 A | 95 mOhms | Enhancement | ||||||
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3,846
In-stock
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onsemi | MOSFET HIGH-CURRENT SWITCHING | SOT-23-3 | Reel | Si | N-Channel | 30 V | 3 A | 95 mOhms |
