- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
- Applied Filters :
30 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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11,925
In-stock
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IXYS Integrated Circuits | MOSFET N Ch Dep Mode FET 250V | 15 V | SMD/SMT | SOT-89-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 250 V | 360 mA | 4 Ohms | Depletion | Clare | ||||||
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6,724
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4 Ohms | Enhancement | |||||||
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7,652
In-stock
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Diodes Incorporated | MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA | 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 500 mA | 4 Ohms | 2.5 V | 0.3 nC, 0.28 nC | Enhancement | |||||
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7,890
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 COMP N-P-CH | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V | 220 mA | 4 Ohms | Enhancement | |||||||
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937
In-stock
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STMicroelectronics | MOSFET P-Ch 500V 3 Ohm 2.8A Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 2.8 A | 4 Ohms | 20 nC | Enhancement | ||||||
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7,925
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 550 mA | 4 Ohms | 1.7 V | 7.6 nC | Enhancement | |||||
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9,500
In-stock
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Diodes Incorporated | MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 260 mA | 4 Ohms | 700 mV | 360 pC | Enhancement | |||||
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49,370
In-stock
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onsemi | MOSFET SC70-6 N-CH 25V | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 220 mA | 4 Ohms | Enhancement | |||||||
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1,400
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 COMP N-P-CH | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V | 220 mA, - 410 mA | 4 Ohms | Enhancement | |||||||
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1,261
In-stock
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Fairchild Semiconductor | MOSFET -250V Single | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 550 mA | 4 Ohms | Enhancement | |||||||
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1,774
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 500 mA | 4 Ohms | Enhancement | |||||||
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1,473
In-stock
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onsemi | MOSFET NFET IPAK 600V 2.2A 4.8R | 30 V | Through Hole | TO-247-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.4 A | 4 Ohms | 4.5 V | 10.1 nC | ||||||
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1,658
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | |||||
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4,886
In-stock
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Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-26-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 305 mA | 4 Ohms | 1.4 V | 304 nC | Enhancement | |||||
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2,366
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 320 mA | 4 Ohms | Enhancement | |||||||
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2,644
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | |||||
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3,651
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 250 mA | 4 Ohms | Enhancement | |||||||
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9,808
In-stock
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Toshiba | MOSFET Small Signal MOSFET | +/- 8 V | SMD/SMT | SOT-723-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 800 mA | 4 Ohms | - 300 mV | 1.6 nC | Enhancement | ||||||
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4,012
In-stock
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Toshiba | MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 400 mA | 4 Ohms | 1.8 V, - 1.8 V | ||||||||||
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5,725
In-stock
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Toshiba | MOSFET N-Ch Sm Sig FET 0.1A 30V 2-in-1 | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 30 V | 100 mA | 4 Ohms | 1.5 V | ||||||||||
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8,392
In-stock
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Toshiba | MOSFET Nch MOSFET | +/- 8 V | SMD/SMT | CST3-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 4 Ohms | - 1 V | 1.6 nC | Enhancement | |||||
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3,995
In-stock
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Toshiba | MOSFET N-Ch Sm Sig FET 0.1A 30V 2-in-1 | SMD/SMT | SOT-553-5 | Reel | 2 Channel | Si | N-Channel | 30 V | 100 mA | 4 Ohms | 1.5 V | ||||||||||
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1,316
In-stock
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Texas instruments | MOSFET 20-V N-Ch FemtoFET | 10 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 0.5 A | 4 Ohms | 850 mV | 0.216 nC | Enhancement | PicoStar | ||||
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9,000
In-stock
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Diodes Incorporated | MOSFET .2W 50V .16A | 12 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 160 mA | 4 Ohms | Enhancement | |||||||
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VIEW | Toshiba | MOSFET N-Ch Sm Sig FET 0.1A 30V 2-in-1 | SMD/SMT | SOT-353-5 | Reel | 2 Channel | Si | N-Channel | 30 V | 100 mA | 4 Ohms | 1.5 V | ||||||||||
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VIEW | onsemi | MOSFET NFET SO8FL 30V | SMD/SMT | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 4 Ohms | |||||||||||
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VIEW | Toshiba | MOSFET Dual N-ch 30V 0.1A | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 100 mA | 4 Ohms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 3 Amps 1100V 4 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 3 A | 4 Ohms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 3 Amps 1100V 4 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 3 A | 4 Ohms | Enhancement | |||||||
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11,052
In-stock
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Nexperia | MOSFET TAPE13 PWR-MOS | 8 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 300 mA | 4 Ohms | Enhancement |