- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Channel Mode :
- Applied Filters :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,328
In-stock
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Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 160 mA | 14 Ohms | Enhancement | ||||||
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4,475
In-stock
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Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 90 mA | 14 Ohms | Enhancement | ||||||
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4,027
In-stock
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IXYS Integrated Circuits | MOSFET N Ch Dep Mode FET 350V | 20 V | SMD/SMT | SOT-223-3 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 350 V | 5 mA | 14 Ohms | Depletion | Clare | |||||
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2,601
In-stock
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Diodes Incorporated | MOSFET P-Chnl 250V | 40 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 285 V | - 205 mA | 14 Ohms | Enhancement | ||||||
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1,826
In-stock
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Diodes Incorporated | MOSFET P-Chnl 250V | 40 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 197 mA | 14 Ohms | Enhancement | ||||||
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2,095
In-stock
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IXYS Integrated Circuits | MOSFET N Ch Dep Mode FET 415V | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | N-Channel | 415 V | 5 mA | 14 Ohms | Depletion | Clare | ||||||||
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9,880
In-stock
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Toshiba | MOSFET P-Ch Sm Sig FET Id -1.0A -30V -20VGS | SMD/SMT | CST3-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 100 mA | 14 Ohms | - 1.7 V | |||||||||
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308
In-stock
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Toshiba | MOSFET N-Ch 60V 25A Rdson 0.046 Ohm | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 25 A | 14 Ohms | 29 nC | |||||||||
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11,738
In-stock
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Diodes Incorporated | MOSFET P-Chnl 45V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 45 V | - 230 mA | 14 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 14 Ohms | ||||||||||
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33
In-stock
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IXYS Integrated Circuits | MOSFET N Ch Dep Mode FET 415V | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | N-Channel | 415 V | 5 mA | 14 Ohms | Depletion | Clare |
