- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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31,212
In-stock
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Nexperia | MOSFET TAPE13 PWR-MOS | 30 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement | ||||||
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25,304
In-stock
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Fairchild Semiconductor | MOSFET SSOT-3 N-CH 30V | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.9 A | 81 mOhms | Enhancement | ||||||
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9,369
In-stock
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Fairchild Semiconductor | MOSFET N-CH/600V/2A/A.QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1.9 A | 3.6 Ohms | Enhancement | ||||||
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13,186
In-stock
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Nexperia | MOSFET TAPE7 PWR-MO | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.9 A | 77 mOhms | Enhancement | ||||||
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7,094
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 N-CH 20V | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.9 A | 115 mOhms | Enhancement | PowerTrench | |||||
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5,720
In-stock
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IR / Infineon | MOSFET MOSFT 55V 1.9A 160mOhm 7nC | 20 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 1.9 A | 160 mOhms | 7 nC | ||||||||
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2,854
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 230 mOhms | Enhancement | ||||||
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4,492
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement | ||||||
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2,476
In-stock
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Fairchild Semiconductor | MOSFET 600V 1.9A NCH MOSFET | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 1.9 A | 4.7 Ohms | QFET | ||||||||
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2,464
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 1.9A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1.9 A | 2.8 Ohms | 3 V | 12 nC | CoolMOS | ||||
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5,252
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.9 A | 4.7 Ohms | Enhancement | ||||||
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2,021
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 160mOhms 7nC | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 1.9 A | 160 mOhms | 7 nC | Enhancement | |||||
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1,972
In-stock
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IR / Infineon | MOSFET MOSFT 150V 1.9A 280mOhm 10nC | 30 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 150 V | 1.9 A | 280 mOhms | 10 nC | ||||||||
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40,000
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement | ||||||
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2,103
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 280mOhms 10nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 1.9 A | 280 mOhms | 10 nC | Enhancement | |||||
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1,470
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 1.9A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.9 A | 2.4 Ohms | 2.1 V | 12 nC | Enhancement | CoolMOS |
