- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 105 mOhms (3)
- 110 mOhms (5)
- 129 mOhms (1)
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- 22.8 mOhms (1)
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- 5.7 mOhms (4)
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- 50 mOhms (2)
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- 990 mOhms (2)
- Qg - Gate Charge :
-
- 10 nC (8)
- 117 nC (5)
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- 20 nC (3)
- 22.7 nC (5)
- 23 nC (1)
- 24.7 nC (2)
- 25.2 nC (1)
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- 29.5 nC (1)
- 3 nC, 12 nC (1)
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- 36 nC (4)
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- 4.8 nC (1)
- 45 nC (3)
- 46 nC (3)
- 50 nC (3)
- 58 nC (3)
- 6.2 nC (1)
- 65 nC (1)
- 7 nC (1)
- 70 nC (4)
- 81 nC (1)
- 85 nC (3)
- Applied Filters :
115 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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868
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
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671
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
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500
In-stock
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Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 17 A | 129 mOhms | 3 V | 23 nC | Enhancement | ||||
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281
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-247-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
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3,451
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.162 Ohm 17A MDmesh II PWR | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 190 mOhms | 45 nC | Enhancement | |||||
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3,767
In-stock
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Fairchild Semiconductor | MOSFET 30V NChan Dual Cool PowerTrench SyncFET | 20 V | SMD/SMT | DualCool-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 17 A | 5 mOhms | 1.9 V | 15.5 nC | PowerTrench | ||||
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3,028
In-stock
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Fairchild Semiconductor | MOSFET Thin gate 25/12V NCh PowerTrench MOSFET | SMD/SMT | Power-33-8 | Reel | Si | N-Channel | 25 V | 17 A | 5.7 mOhms | 12 nC | PowerTrench | |||||||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench SyncFET | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 17 A | 5.7 mOhms | 81 nC | PowerTrench SyncFET | ||||||
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27,370
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | |||
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1,210
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 290mOhm D2PAK PKG | 20 V, 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
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799
In-stock
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Fairchild Semiconductor | MOSFET 800V SuperFET2 N-Chnl Mosfet | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
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GET PRICE |
7,660
In-stock
|
STMicroelectronics | MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 270 mOhms | 85 nC | Enhancement | ||||
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6,474
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17 A | 4.2 mOhms | Enhancement | OptiMOS | |||||
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99
In-stock
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onsemi | MOSFET GAN 600V 17A 150MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 17 A | 340 mOhms | 1.6 V | 6.2 nC | Enhancement | ||||
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5,332
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
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3,113
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 17A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 17 A | 85 mOhms | 2 V | 19 nC | Enhancement | ||||
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789
In-stock
|
STMicroelectronics | MOSFET MDmesh II N-Ch 500V 17A ID | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 17 A | 162 mOhms | |||||||
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2,630
In-stock
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STMicroelectronics | MOSFET N-channel 250 V 17A STripFET II | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 17 A | 165 mOhms | 3 V | 29.5 nC | Enhancement | ||||
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2,462
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 70mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 70 mOhms | 13.3 nC | ||||||||
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876
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | |||
|
|
2,826
In-stock
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 105 mOhms | 2 V | 34 nC | Enhancement | ||||
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1,261
In-stock
|
STMicroelectronics | MOSFET N-ch 500 Volt 17Amp Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 17 A | 230 mOhms | 85 nC | Enhancement | |||||
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2,875
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 17A 90mOhm 24.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 17 A | 90 mOhms | 24.7 nC | ||||||||
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3,084
In-stock
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Fairchild Semiconductor | MOSFET 60V Single | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17 A | 75 mOhms | Enhancement | ||||||
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3,880
In-stock
|
Fairchild Semiconductor | MOSFET 17a 60V N-Channel Logic Level | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17 A | 52 mOhms | Enhancement | UltraFET | |||||
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1,762
In-stock
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Infineon Technologies | MOSFET MOSFT 17A 22.7nC 100mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 17 A | 150 mOhms | 22.7 nC | ||||||||
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20,950
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 17A 90mOhm 24.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 90 mOhms | 4 V | 37 nC | |||||
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395
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 290 mOhm | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
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2,160
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17 A | 5.7 mOhms | Enhancement | PowerTrench | |||||
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1,663
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 17A 95mOhm 13nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 17 A | 80 mOhms | 4.9 V | 13 nC |
