- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 1.8 mOhms (2)
- 10 mOhms (2)
- 10.5 mOhms (4)
- 11.3 mOhms (1)
- 16 mOhms (2)
- 17.4 mOhms (1)
- 18 mOhms (1)
- 2.1 mOhms (4)
- 2.3 mOhms (1)
- 2.4 mOhms (2)
- 2.5 mOhms (2)
- 2.6 mOhms (2)
- 2.7 mOhms (5)
- 2.8 mOhms (2)
- 22 mOhms (3)
- 23 mOhms (1)
- 25 mOhms (2)
- 3 mOhms (4)
- 3.1 mOhms (1)
- 3.2 mOhms (4)
- 3.3 mOhms (3)
- 3.4 mOhms (1)
- 3.7 mOhms (7)
- 3.8 mOhms (5)
- 3.9 mOhms (1)
- 33 mOhms (6)
- 4 mOhms (4)
- 4.1 mOhms (1)
- 4.2 mOhms (1)
- 4.3 mOhms (2)
- 4.4 mOhms (2)
- 4.5 mOhms (3)
- 4.8 mOhms (1)
- 41 mOhms (2)
- 49 mOhms (1)
- 5 mOhms (1)
- 5.2 mOhms (2)
- 5.3 mOhms (2)
- 5.7 mOhms (3)
- 5.8 mOhms (2)
- 56 mOhms (1)
- 6.3 mOhms (3)
- 6.4 mOhms (1)
- 6.5 mOhms (1)
- 7 mOhms (1)
- 8.2 mOhms (1)
- 8.4 mOhms (1)
- Qg - Gate Charge :
-
- 108 nC (1)
- 110 nC (1)
- 140 nC (2)
- 170 nC (1)
- 180 nC (1)
- 240 nC (1)
- 245 nC (1)
- 27 nC (3)
- 31 nC (1)
- 33 nC (3)
- 34 nC (1)
- 340 nC (2)
- 35 nC (1)
- 360 nC (1)
- 406 nC (1)
- 42 nC (2)
- 44 nC (1)
- 50 nC (1)
- 55 nC (2)
- 56 nC (2)
- 60 nC (2)
- 640 nC (2)
- 66 nC (2)
- 68 nC (6)
- 69 nC (1)
- 73 nC (2)
- 75 nC (3)
- 78 nC (2)
- 79 nC (2)
- 83 nC (2)
- 89 nC (1)
- 90 nC (3)
- 91 nC (1)
- 96 nC (3)
- 96.3 nC (1)
- 98 nC (6)
- 99 nC (1)
- Applied Filters :
106 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
45
In-stock
|
IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | |||
|
|
10
In-stock
|
IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | |||
|
|
11,946
In-stock
|
STMicroelectronics | MOSFET N-channel 80 V 3.5 mOhm typ 90 A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.3 mOhms | 4.5 V | 96 nC | |||||
|
|
402
In-stock
|
IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
|
|
55,020
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 6.3 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
|
|
8,018
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 5.3 mOhms | 2 V | 68 nC | Enhancement | OptiMOS | |||
|
|
3,206
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.1 mOhms | 2.1 V | 83 nC | Enhancement | ||||
|
|
2,958
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.4 mOhms | 2 V | 69 nC | Enhancement | ||||
|
|
11,755
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 4.8 mOhms | 50 nC | Enhancement | OptiMOS | ||||
|
|
39,600
In-stock
|
Infineon Technologies | MOSFET 40V 90A 2.5mOhm 89nC StrongIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.4 mOhms | 2.2 V to 3.9 V | 89 nC | Enhancement | StrongIRFET | |||
|
|
2,663
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 1.8 mOhms | 1 V | 140 nC | Enhancement | OptiMOS | |||
|
|
4,650
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 5.3 mOhms | 2 V | 68 nC | Enhancement | OptiMOS | |||
|
|
4,058
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 10 mOhms | 4 V | 44 nC | Enhancement | OptiMOS | |||
|
|
3,745
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.7 mOhms | 1.2 V | 79 nC | Enhancement | OptiMOS | |||
|
|
2,400
In-stock
|
Infineon Technologies | MOSFET MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 5.8 mOhms | 1.1 V | 98 nC | Enhancement | ||||
|
|
4,780
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 10.5 mOhms | Enhancement | OptiMOS | |||||
|
|
3,132
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | Enhancement | OptiMOS | |||||
|
|
7,135
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.7 mOhms | 2 V | 66 nC | Enhancement | OptiMOS | |||
|
|
4,764
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 6.3 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
|
|
1,797
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 27 nC | Enhancement | |||||
|
|
2,881
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.4 mOhms | OptiMOS | ||||||||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4 mOhms | 4.5 V | 96 nC | Enhancement | ||||
|
|
2,451
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.7 mOhms | 2 V | 66 nC | Enhancement | ||||
|
|
2,686
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 5.2 mOhms | PowerTrench | ||||||
|
|
2,474
In-stock
|
Fairchild Semiconductor | MOSFET N-channel Power Trench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3.2 mOhms | 3.2 V | 42 nC | Enhancement | PowerTrench | |||
|
|
1,970
In-stock
|
Fairchild Semiconductor | MOSFET 60/20V 90A N-chnl PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 11.3 mOhms | 2 V | 35 nC | Enhancement | PowerTrench | |||
|
|
2,473
In-stock
|
Fairchild Semiconductor | MOSFET 80V 90A Dual DPAK N-Chnl PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V | 90 A | 17.4 mOhms | 2 V | 34 nC | Enhancement | ||||
|
|
4,000
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 90 A | 18 mOhms | Enhancement | QFET | |||||
|
|
2,608
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3 mOhms | 1.2 V | 78 nC | Enhancement | OptiMOS | |||
|
|
2,654
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 4 mOhms | Enhancement | OptiMOS |
