- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
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205
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 53 Amp | 30 V | SMD/SMT | ISOTOP-4 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 53 A | 80 mOhms | Enhancement | ||||||
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7,413
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 6.7 mOhms | 1 V | 21 nC | Enhancement | OptiMOS | |||
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77
In-stock
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IXYS | MOSFET 60 Amps 500V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 53 A | 100 mOhms | 4.5 V | 610 nC | Enhancement | Linear L2 | ||||
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8,000
In-stock
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onsemi | MOSFET NFET SOT963 20V 280MA TR | SMD/SMT | SOT-963-6 | Reel | Si | N-Channel | 20 V | 53 A | - | |||||||||||
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678
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 53 A | 10 mOhms | Enhancement | QFET | |||||
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46
In-stock
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IXYS | MOSFET DIODE Id54 BVdass800 | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 53 A | 140 mOhms | Enhancement | HyperFET | |||||
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1,969
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 53A 16.5mOhm 48nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 53 A | 16.5 mOhms | 48 nC | ||||||||
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1,738
In-stock
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IR / Infineon | MOSFET MOSFT 75V 53A 16mOhm 50nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 53 A | 16 mOhms | 50 nC | ||||||||
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4,720
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 6.7 mOhms | 1 V | 21 nC | Enhancement | OptiMOS | |||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
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16
In-stock
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IXYS | MOSFET DUAL PHASE LEGCONFIG 150V 53A MOSFET | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 175 C | Tube | 2 Channel | Si | N-Channel | 150 V | 53 A | 20 mOhms | 4.5 V | 150 nC | TrenchT2 | ||||
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227
In-stock
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IR / Infineon | MOSFET MOSFT 55V 53A 16.5mOhm 48nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 53 A | 16.5 mOhms | 48 nC | ||||||||
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91
In-stock
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IR / Infineon | MOSFET 55V, 53A, 16.5mOhm Automotive MOSFET | Through Hole | TO-262-3 | + 175 C | Tube | Si | N-Channel | 55 V | 53 A | 16.5 mOhms | 48 nC | |||||||||
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6,192
In-stock
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Toshiba | MOSFET U-MOSVIII-H 30V 53A 24nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 53 A | 16 mOhms | 4 V | 22 nC | Enhancement | ||||||
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1,100
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 53 A | 70 mOhms | 3 V | 154 nC | Enhancement | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 53A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 53 A | 16 mOhms | OptiMOS | |||||||||
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VIEW | onsemi | MOSFET NFET SO8FL 30V | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 8 mOhms | |||||||
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4,459
In-stock
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Toshiba | MOSFET U-MOSVIII-H 30V 53A 24nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 35 mOhms | 1.3 V to 2.3 V | 24 nC | UMOSVIII | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 53 A | 16.5 mOhms | Enhancement | OptiMOS | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 53 A | 16 mOhms | 50 nC | Enhancement | ||||||
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1,190
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 16mOhms 50nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 53 A | 16 mOhms | 2 V to 4 V | 50 nC | Enhancement |
