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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,366
In-stock
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onsemi | MOSFET T8 60V LOW COSS | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 250 A | 1.1 mOhms | 1.2 V | 89 nC | Enhancement | ||||
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GET PRICE |
49,300
In-stock
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Infineon Technologies | MOSFET 40V 2.0mOhm 195A HEXFET 230W 150nC | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 250 A | 2 mOhms | 225 nC | StrongIRFET | |||||||
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14
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 100 V | 250 A | 6.5 mOhms | HyperFET | ||||||||||
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100
In-stock
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IR / Infineon | MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 250 A | 1.8 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | ||||
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80,000
In-stock
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IR / Infineon | MOSFET 40V 195A 1.8mOhm 150nC StrongIRFET | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 250 A | 1.8 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | ||||
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VIEW | IXYS | MOSFET 250 Amps 100V 0.005 Rds | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 250 A | 5 mOhms |
