- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- D3PAK-3 (1)
- DirectFET-SQ (1)
- DualCool-56-8 (1)
- Max247-3 (2)
- Micro-8 (1)
- PLUS-247-3 (1)
- PLUS-264-3 (1)
- Power-33-8 (1)
- Power-56-8 (3)
- PowerPAK-1212-8 (1)
- PowerPAK-SO-8 (1)
- PowerPAK-SO-8L (1)
- PowerPAK-SO-8L-4 (8)
- SO-FL-8 (1)
- SOP-Advance-8 (2)
- SOT-227-4 (1)
- T-MAX-3 (1)
- TDSON-8 (2)
- TO-220-3 (14)
- TO-220FP-3 (4)
- TO-247-3 (19)
- TO-251-3 (2)
- TO-252-3 (17)
- TO-263-3 (9)
- TO-264-3 (5)
- TO-268-3 (3)
- TO-3P-3 (3)
- VSON-Clip-8 (10)
- VSONP-8 (13)
- WDSON-2-3 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 0.00115 Ohms (2)
- 0.0036 Ohms (1)
- 0.0037 Ohms (1)
- 0.0063 Ohms (1)
- 0.028 Ohms (1)
- 1.1 mOhms (2)
- 1.4 mOhms (1)
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- 10.4 mOhms (1)
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- 100 mOhms (5)
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- 11.4 mOhms (1)
- 11.5 mOhms (1)
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- 14 mOhms (6)
- 140 mOhms (1)
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- 18 mOhms (2)
- 19 mOhms (1)
- 2.2 mOhms (1)
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- 22.5 mOhms (5)
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- 4.8 mOhms (1)
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- 40 mOhms (5)
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- 5.5 mOhms (2)
- 5.7 mOhms (1)
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- 50 mOhms (3)
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- 6.3 mOhms (2)
- 6.5 mOhms (1)
- 6.8 mOhms (1)
- 60 Ohms (2)
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- 75 mOhms (1)
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- 8.2 mOhms (3)
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- 8.5 mOhms (2)
- 8.7 mOhms (1)
- 88 mOhms (2)
- 9 mOhms (2)
- 9.8 mOhms (2)
- 90 mOhms (3)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 105 nC (1)
- 107 nC (1)
- 11 nC (1)
- 13.3 nC (1)
- 135 nC (1)
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- 150 nC (2)
- 17.5 nC (1)
- 170 nC (2)
- 18 nC (2)
- 190 nC (3)
- 2.9 nC (1)
- 22.2 nC (1)
- 224 nC (1)
- 23 nC (8)
- 25 nC (1)
- 250 nC (1)
- 255 nC (2)
- 27 nC (2)
- 28 nC (2)
- 280 nC (4)
- 283 nC (1)
- 3.9 nC (2)
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- 49 nC (2)
- 53 nC (1)
- 54 nC (3)
- 55 nC (4)
- 6.2 nC (1)
- 6.5 nC (2)
- 60 nC (4)
- 610 nC (1)
- 64 nC (1)
- 65 nC (2)
- 7.5 nC (1)
- 74 nC (1)
- 75 nC (1)
- 8.4 nC (1)
- 8.9 nC (1)
- 80 nC (2)
- 81 nC (1)
- 82 nC (2)
- 9 nC (1)
- 9.2 nC (2)
- 9.3 nC (1)
- 95 nC (1)
- 96 nC (3)
- 99 nC (1)
- Package :
- Applied Filters :
132 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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28,000
In-stock
|
Vishay Semiconductors | MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 68 W | P-Channel | 40 V | 60 A | 7 mOhms | 2 V | 170 nC | PAKSO-8L | 2500 | Green available | |||||||||||
|
|
GET PRICE |
9,650
In-stock
|
Vishay Semiconductors | MOSFET -40V Vds PowerPAK AEC-Q101 Qualified | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 68 W | P-Channel | 40 V | 60 A | 7 mOhms | 2 V | 170 nC | PowerPAK-SO-8-4 | 3000 | Green available | ||||||||||
|
|
3,000
In-stock
|
Vishay Semiconductors | MOSFET 40V Vds 60A Id AEC-Q101 Qualified | 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 5 mOhms | 1.5 V | 55 nC | Enhancement | |||||||||
|
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22,661
In-stock
|
Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | |||||||||
|
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2,967
In-stock
|
STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 16 mOhms | Enhancement | |||||||||||
|
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3,863
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 8.7 mOhms | 1.9 V | 64 nC | PowerTrench | |||||||||
|
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4,300
In-stock
|
STMicroelectronics | MOSFET N-Ch, 100V-0.015ohms 60A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 15 mOhms | Enhancement | |||||||||||
|
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4,512
In-stock
|
Fairchild Semiconductor | MOSFET 30/20V N-Chan PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 1.1 mOhms | Enhancement | PowerTrench | ||||||||||
|
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4,522
In-stock
|
Fairchild Semiconductor | MOSFET PT5 100V/20V Nch PowerTrench MOSFET | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 100 V | 60 A | 4.85 mOhms | PowerTrench Power Clip | |||||||||||||
|
|
GET PRICE |
7,650
In-stock
|
Infineon Technologies | MOSFET MOSFT 250V 60A 33mOhm 99nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 33 mOhms | 99 nC | Enhancement | |||||||||
|
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6,262
In-stock
|
Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | |||||||||
|
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2,991
In-stock
|
STMicroelectronics | MOSFET N-channel MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 14 mOhms | Enhancement | |||||||||||
|
|
973
In-stock
|
IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET | |||||||||||
|
|
GET PRICE |
23,370
In-stock
|
STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 14 mOhms | Enhancement | ||||||||||
|
|
388
In-stock
|
STMicroelectronics | MOSFET N-Ch 500 Volt 60 Amp | 30 V | Through Hole | Max247-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 50 mOhms | Enhancement | |||||||||||
|
|
671
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS | ||||||||
|
|
113
In-stock
|
IXYS | MOSFET 60 Amps 800V 0.14 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 60 A | 140 mOhms | 5 V | 250 nC | Enhancement | PolarHV, HiPerFET | ||||||||
|
|
384
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 60 A | 50 mOhms | 4 V | 27 nC | Enhancement | |||||||||
|
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1,028
In-stock
|
STMicroelectronics | MOSFET N-channel 300 V, 60A II Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 60 A | 45 mOhms | Enhancement | |||||||||||
|
|
3,150
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ | 20 V | SMD/SMT | DirectFET-SQ | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 8.5 mOhms | 11 nC | |||||||||||||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 2.6 mOhms | 1.5 V | 80 nC | Enhancement | |||||||||
|
|
GET PRICE |
58,200
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 60A 32mOhm 60nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | ||||||||||||
|
|
1,709
In-stock
|
IR / Infineon | MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 7.3 mOhms | 2.1 V | 44 nC | Enhancement | StrongIRFET | ||||||||
|
|
1,076
In-stock
|
STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp | 15 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 14 mOhms | Enhancement | |||||||||||
|
|
3,466
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 13.5 mOhms | 3 V | 23 nC | Enhancement | |||||||||
|
|
804
In-stock
|
STMicroelectronics | MOSFET N-Ch 55 Volt 60 Amp | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 14 mOhms | Enhancement | |||||||||||
|
|
1,351
In-stock
|
Vishay Semiconductors | MOSFET 40V 60A 55W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 0.0036 Ohms | 1.5 V | 65 nC | Enhancement | TrenchFET | ||||||||
|
|
830
In-stock
|
STMicroelectronics | MOSFET N-Ch, 55V-0.005ohms 80A | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 60 A | 6.5 mOhms | Enhancement | |||||||||||
|
|
911
In-stock
|
STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp | 20 V | SMD/SMT | TO-263-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 15 mOhms | Enhancement | |||||||||||
|
|
1,380
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC |
