- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
35 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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24,152
In-stock
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onsemi | MOSFET 12V Industrial Relay Inductive Load | 6 V | SMD/SMT | SOT-23-3 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 14 V | 500 mA | 900 mOhms | Enhancement | |||||
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26,054
In-stock
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onsemi | MOSFET 12V Industrial Relay Inductive Load | 6 V | SMD/SMT | SC-70-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel | 14 V | 500 mA | 900 mOhms | Enhancement | |||||
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4,059
In-stock
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Diodes Incorporated | MOSFET N-Chnl 240V | 40 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 500 mA | 6 Ohms | Enhancement | |||||
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7,652
In-stock
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Diodes Incorporated | MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA | 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 500 mA | 4 Ohms | 2.5 V | 0.3 nC, 0.28 nC | Enhancement | |||
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32,806
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhance | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 500 mA | 5 Ohms | Enhancement | |||||
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14,712
In-stock
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Fairchild Semiconductor | MOSFET N-Channel MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | |||||
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5,256
In-stock
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onsemi | MOSFET 5V Dual Integrated Relay Inductive Load | 6 V | SMD/SMT | SC-70-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel | 6 V | 500 mA | 900 mOhms | Enhancement | |||||
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5,846
In-stock
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onsemi | MOSFET MI SOT23 12V LOAD DRVR | 6 V | SMD/SMT | SOT-23-3 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 16 V | 500 mA | 900 mOhms | 800 mV | Enhancement | ||||
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7,830
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 N-CH 25V | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 500 mA | 450 mOhms | Enhancement | |||||
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1,423
In-stock
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Diodes Incorporated | MOSFET 60V 225mW | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 500 mA | 5 Ohms | Enhancement | |||||
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7,611
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | |||||
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3,564
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | |||||
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3,048
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | |||||
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1,774
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 500 mA | 4 Ohms | Enhancement | |||||
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9,990
In-stock
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onsemi | MOSFET NFET 30V .56A 1500M | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 500 mA | 1.5 Ohms | 1.4 V | 1.15 nC | ||||
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4,603
In-stock
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Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||
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5,400
In-stock
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Diodes Incorporated | MOSFET N-Ch. 50V 500mA AEC-Q101 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 800 mV | 0.6 nC | Enhancement | |||
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1,862
In-stock
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onsemi | MOSFET NCH 200V 0.5A 4V DRIVE | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 500 mA | 2.8 Ohms | 1.2 V | 2.4 nC | Enhancement | |||
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1,316
In-stock
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Infineon Technologies | MOSFET N-Ch 400V 500mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 500 mA | 2.2 Ohms | 2.1 V | - | Enhancement | |||
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5,900
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60Vdss 60Vdgr | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 500 mA | 5.3 Ohms | 800 mV | Enhancement | ||||
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8,997
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 41V-60V,SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 1.8 Ohms | 800 pC | Enhancement | ||||
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134
In-stock
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Fairchild Semiconductor | MOSFET N-CH/450V/0.5A/BFET | 50 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 450 V | 500 mA | 4.25 Ohms | Enhancement | |||||
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4,245
In-stock
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Fairchild Semiconductor | MOSFET NCh Enhancement Mode | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | |||||
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359
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 1.3 Ohms | 400 mV | 800 pC | Enhancement | |||
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276
In-stock
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Infineon Technologies | MOSFET N-Ch 400V 500mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 500 mA | 2.2 Ohms | 2.1 V | - | Enhancement | |||
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23,187
In-stock
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Toshiba | MOSFET Small-signal FET 0.5A 20V 46pF 1.52 | 10 V | SMD/SMT | SOT-723-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 500 mA | 460 mOhms | 350 mV | 1.23 nC | Enhancement | ||||
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7,831
In-stock
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Toshiba | MOSFET 20V VDSS 10V VGSS N-Ch 150mW PD 1.5V | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 20 V | 500 mA | 630 mOhms | |||||||||
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2,787
In-stock
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Toshiba | MOSFET Small Signal MOSFET | 10 V | SMD/SMT | SOT-416-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 500 mA | 1.52 Ohms | 350 mV | 1.23 nC | Enhancement | ||||
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54,000
In-stock
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onsemi | MOSFET NFET 30V .56A 1500M | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 500 mA | 1 Ohms | Enhancement | |||||
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49,850
In-stock
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onsemi | MOSFET NFET 30V .56A 1500M | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 500 mA | 1 Ohms | Enhancement |
