- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,421
In-stock
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Fairchild Semiconductor | MOSFET -20V P-CH PowerTrench MOSFET | 12 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.3 A | 30 mOhms | Enhancement | PowerTrench | |||||
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1,430
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 7.3 A | 690 mOhms | Enhancement | ||||||
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6,730
In-stock
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Diodes Incorporated | MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs | +/- 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 7.3 A | 105 mOhms | - 3 V | 17.2 nC | Enhancement | ||||
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2,384
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch Enh FET 60Vds 20Vgs | +/- 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 7.3 A | 105 mOhms | - 3 V | 17.2 nC | Enhancement | ||||
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2,970
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 X2-DFN2020-6 T&R 3K | +/- 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 7.3 A | 19 mOhms | - 1 V | 28.2 nC | Enhancement | ||||
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2,400
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | TO-263-3 | Reel | 1 Channel | Si | P-Channel | - 200 V | - 7.3 A | 690 mOhms |
