- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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16,362
In-stock
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Diodes Incorporated | MOSFET P-Ch 100 Volt 5.2A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.8 A | 190 mOhms | - 4 V | 26.9 nC | Enhancement | ||||
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6,760
In-stock
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Fairchild Semiconductor | MOSFET P-Ch 1.5V Specified PowerTrench | 8 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.8 A | 68 mOhms | Enhancement | PowerTrench | |||||
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14,120
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 90 mOhms | 8.2 nC | Enhancement | |||||
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7,100
In-stock
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Diodes Incorporated | MOSFET 20V 3.8A DUAL P-CHAN | 12 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.8 A | 70 mOhms | Enhancement | ||||||
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GET PRICE |
32,980
In-stock
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Diodes Incorporated | MOSFET P-Channel 1.25W | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 120 mOhms | Enhancement | |||||
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6,775
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | ||||
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1,100
In-stock
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Fairchild Semiconductor | MOSFET SO-8 DUAL P-CH -20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.8 A | 75 mOhms | Enhancement | PowerTrench | |||||
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12,549
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | ||||
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1,345
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -3.8A 98mOhm 11nC | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 165 mOhms | 11 nC | ||||||||
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995
In-stock
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Diodes Incorporated | MOSFET 30V P Chnl HDMOS | 20 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 75 mOhms | Enhancement | ||||||
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2,167
In-stock
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Diodes Incorporated | MOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS | 12 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.8 A | 68 mOhms | - 900 mV | 6.5 nC | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enhancement Mode | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 70 mOhms | - 3 V | 8.2 nC | Enhancement |
