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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,139
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHAN | 12 V, 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 9.5 A, 9.5 A | 11 mOhms, 11 mOhms | 500 mV, 500 mV | 26 nC, 26 nC | Enhancement | |||
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2,450
In-stock
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Diodes Incorporated | MOSFET Dual N-Ch Enh FET 30V 9.8A 20Vdss | 12 V, 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 9.5 A, 9.5 A | 11 mOhms, 11 mOhms | 500 mV, 500 mV | 26 nC, 26 nC | Enhancement |
