- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,022
In-stock
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Fairchild Semiconductor | MOSFET 30V Dual N & P-Ch PowerTrench MOSFET | 20 V, 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 60 V | 8.6 A | 17 mOhms, 20.5 mOhms | Enhancement | PowerTrench | |||||
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8,382
In-stock
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Nexperia | MOSFET 20V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8.6 A | 20 mOhms | 400 mV | 13.4 nC | Enhancement | ||||
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430
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8.6 A | 1.3 Ohms | Enhancement | QFET | |||||
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3,798
In-stock
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Diodes Incorporated | MOSFET N-CHAN ENHNCMNT MODE | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.6 A | 20 mOhms | Enhancement | ||||||
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2,389
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 25Vgs 9A 16mOhm 1.6V | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.6 A | 20 mOhms | 800 mV | 8.7 nC | Enhancement | ||||
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110
In-stock
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STMicroelectronics | MOSFET N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8.6 A | 850 mOhms | 3.75 V | 64 nC | Enhancement |
