- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,050
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 72A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
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2,499
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 72A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
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7,190
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 22.4A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
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680
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 22.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
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716
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 22.4A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
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250
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 22.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
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158
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 22.4A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
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2,060
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 22.4A TO247-3 | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 150 mOhms | CoolMOS | |||||||||||
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567
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 22.4A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
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560
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 22.4 A | 162 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | ||||
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470
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 22.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
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170
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | SMD/SMT | ThinPAK-5 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 22.4 A | 162 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 22.4A TO220-3 | 20 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS |