- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
6,078
In-stock
|
Vishay Semiconductors | MOSFET 60V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 0.0135 Ohms | - 2.5 V | 150 nC | Enhancement | TrenchFET | ||
|
|
1,660
In-stock
|
Siliconix / Vishay | MOSFET 80V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 50 A | 0.02 Ohms | - 2.5 V | 137 nC | Enhancement | TrenchFET | |||
|
|
8,984
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 9.2 mOhms | - 4 V | 51 nC | Enhancement | OptiMOS | |||
|
|
5,377
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 5.7 mOhms | - 2 V | - 126 nC | Enhancement | OptiMOS | |||
|
|
6,303
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -50A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 10.5 mOhms | Enhancement | OptiMOS | |||||
|
|
1,870
In-stock
|
Vishay Semiconductors | MOSFET 40V 50A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TP-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 0.0076 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | |||
|
|
2,607
In-stock
|
Vishay Semiconductors | MOSFET 30V 50A 71W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.008 Ohms | - 2.5 V | 83 nC | Enhancement | TrenchFET | |||
|
|
1,987
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 5.7 mOhms | - 2 V | - 126 nC | Enhancement | ||||
|
|
3,634
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 8.2 mOhms | - 2.2 V | 59 nC | Enhancement | ||||
|
|
771
In-stock
|
Vishay Semiconductors | MOSFET 40V 50A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 0.01 Ohms | - 2.5 V | 80 nC | Enhancement | TrenchFET | |||
|
|
525
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.005 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
|
|
734
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 50 A | 36 S | - 2.5 V | 137 nC | Enhancement | TrenchFET | |||
|
|
892
In-stock
|
STMicroelectronics | MOSFET Automotive-grade P-channel 40 V, 0.013 Ohm typ., 46 A STripF... | +/- 18 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 17 mOhms | - 2.5 V | 65.5 nC | Enhancement | STripFET | |||
|
|
1,330
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 9.2 mOhms | - 4 V | 51 nC | Enhancement | ||||
|
|
1,401
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 14 mOhms | - 2.5 V | 91 nC | Enhancement | ||||
|
|
88
In-stock
|
IXYS | MOSFET -50 Amps -100V 0.055 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 50 A | 55 mOhms | - 5 V | 140 nC | Enhancement | ||||
|
|
30
In-stock
|
IXYS | MOSFET -50 Amps -100V 0.055 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 50 A | 55 mOhms | Enhancement | ||||||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 8.2 mOhms | - 2.2 V | 59 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
13,957
In-stock
|
Fairchild Semiconductor | MOSFET PT5 100/25V Pch Power Trench MOSFET | 25 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 50 A | 22 mOhms | - 2.8 V | 42 nC | Enhancement | PowerTrench | ||
|
|
19,998
In-stock
|
Fairchild Semiconductor | MOSFET Trans MOS P-Ch 40V 10.8A 3-Pin 2+Tab | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 12.3 mOhms | Enhancement | PowerTrench | |||||
|
|
800
In-stock
|
onsemi | MOSFET PFET D2PAK 30V 50A 25mOhm | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 25 mOhms | Enhancement | ||||||
|
|
1,600
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 0.013 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
|
|
7,850
In-stock
|
Toshiba | MOSFET P-Ch MOS -50A -60V 90W 6290pF 0.0138 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 13.8 mOhms | ||||||||||
|
|
VIEW | Vishay Semiconductors | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.005 Ohms | - 2.5 V | 155 nC | Enhancement | TrenchFET | ||||
|
|
1,169
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.005 Ohms | - 2.5 V | 146 nC | Enhancement | TrenchFET | |||
|
|
VIEW | IXYS | MOSFET -50 Amps - 500 V 0.055 W Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 50 A | 55 mOhms | - 5 V | 150 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 5.7 mOhms | - 2 V | - 126 nC | Enhancement | ||||
|
|
VIEW | Siliconix / Vishay | MOSFET P-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 0.0078 Ohms | - 2.5 V | 145 nC | Enhancement | TrenchFET | ||||
|
|
VIEW | Renesas Electronics | MOSFET POWER MOSFET TRANSISTOR | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 9.6 mOhms | Enhancement |
