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- Package / Case :
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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,665
In-stock
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Diodes Incorporated | MOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.9 A | 80 mOhms | 1 V | 5.8 nC | Enhancement | ||||
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900
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W | 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.9 A | 35 mOhms | 1 V | 18 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W | 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.9 A | 35 mOhms | 1 V | 18 nC | Enhancement | PowerDI | |||
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1,061
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 25 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.9 A | 22 mOhms | Enhancement | PowerTrench |
