- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,645
In-stock
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Fairchild Semiconductor | MOSFET 20V Dual P-Channel PowerTrench | +/- 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 95 mOhms | - 0.6 V | 5.5 nC | PowerTrench | ||||
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5,764
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 2.3A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 165 mOhms | 6.9 nC | ||||||||
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4,774
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -2.3A 200mOhm 5.8nC LogLvl | 12 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.3 A | 200 mOhms | 5.8 nC | ||||||||
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5,279
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.3 A | 400 mOhms | 7.2 nC | ||||||||
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4,137
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | PQFN-6 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 170 mOhms | 1.9 nC | ||||||||
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4,295
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL PCh -20V 2.3A | 12 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | ||||||||
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2,469
In-stock
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Infineon Technologies | MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | Enhancement | |||||
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2,696
In-stock
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Diodes Incorporated | MOSFET 60V P-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.3 A | 595 mOhms | Enhancement | ||||||
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2,200
In-stock
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Diodes Incorporated | MOSFET 20V P-Chnl HDMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.3 A | 375 mOhms | Enhancement | ||||||
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1,343
In-stock
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Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -10V -2.3A | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 2.3 A | 300 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
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13,559
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.3 A | 120 mOhms | - 950 mV | 3.7 nC | Enhancement | ||||
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16,087
In-stock
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Texas instruments | MOSFET 12V P-CH FemtoFET MOSFET | - 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.3 A | 175 mOhms | - 950 mV | 1.14 nC | NexFET | ||||
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4,517
In-stock
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Texas instruments | MOSFET 12V,P-Ch FemtoFET MOSFET | - 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.3 A | 175 mOhms | - 950 mV | 1.14 nC | |||||
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376
In-stock
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Texas instruments | MOSFET Single P-Ch Enh-Mode MOSFET | - 15 V, 2 V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Tube | 1 Channel | Si | P-Channel | - 15 V | - 2.3 A | 90 mOhms | Enhancement | ||||||
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423
In-stock
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Texas instruments | MOSFET Single P-Ch Enh-Mode MOSFET | - 15 V, 2 V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Reel | 1 Channel | Si | P-Channel | - 15 V | - 2.3 A | 90 mOhms | Enhancement | ||||||
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27,000
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH DUAL | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 115 mOhms | Enhancement | PowerTrench | |||||
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25,000
In-stock
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Fairchild Semiconductor | MOSFET Dual PCh PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 2.3 A | 138 mOhms | Enhancement | PowerTrench | |||||
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829
In-stock
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IR / Infineon | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 250 mOhms | 6.9 nC | Enhancement |
