- Vgs - Gate-Source Voltage :
- Mounting Style :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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18,495
In-stock
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Fairchild Semiconductor | MOSFET 30V Dual N-Channel PwrTrch MOSFET | 20 V | SMD/SMT | MicroFET-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4.8 A | 32 mOhms | Enhancement | PowerTrench | |||||
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1,811
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.8 A | 45 mOhms | 3 V | 5 nC | PowerTrench | ||||||
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1,300
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode FET 12V 8Vgss 0.9W | 8 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 4.8 A | 38 mOhms | 0.8 V | 3.2 nC | Enhancement | ||||
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1,638
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 4.8A/- 6.3A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 4.8 A | 34 mOhms | 4.9 nC | ||||||
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1,046
In-stock
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onsemi | MOSFET NFET TO220FP 600V 4. | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.8 A | 1.8 Ohms | 3 V | 29 nC | Enhancement | ||||
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1,238
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V TSOT26 T&R 3K | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 45 V | 4.8 A | 46 mOhms | 1.2 V | 22.4 nC | Enhancement | ||||
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1,950
In-stock
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onsemi | MOSFET NFET 600V 4A 1.8 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.8 A | 2 Ohms | 3.9 V | 19 nC | |||||
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76
In-stock
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IXYS | MOSFET 5 Amps 500V 1.3 Ohms Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.4 Ohms | 5.5 V | 12.6 nC | Enhancement | PolarHV | |||
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30
In-stock
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IXYS | MOSFET 4.8 Amps 500V 1.4 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.4 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 4.8 Amps 500V 1.4 Ohms Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.4 Ohms | 5.5 V | 12.6 nC | Enhancement | PolarHV | |||
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VIEW | IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 4.8 A | 75 mOhms | 16.7 nC | ||||||||
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4,000
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 4.8A | 12 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 4.8 A | 35 mOhms | 15 nC | Enhancement | |||||
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1,853
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 8.8A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.26 Ohms | 2.5 V | 8.2 nC | Enhancement | ||||
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1,284
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 3.1A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.26 Ohms | 2.5 V | 8.2 nC | Enhancement | CoolMOS | |||
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1,500
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 8.8A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.26 Ohms | 2.5 V | 8.2 nC | Enhancement | CoolMOS | |||
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1,386
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 3.1A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.26 Ohms | 2.5 V | 8.2 nC | Enhancement | CoolMOS |
