- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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43,925
In-stock
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Nexperia | MOSFET 20V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.4 A | 24 mOhms | 400 mV | 6.2 nC | Enhancement | ||||
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6,965
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 5.4A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.4 A | 45 mOhms | 1.2 V | 18 nC | Enhancement | ||||
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7,464
In-stock
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STMicroelectronics | MOSFET N-Ch 400 Volt 5.4 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 5.4 A | 1 Ohms | Enhancement | ||||||
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3,293
In-stock
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STMicroelectronics | MOSFET N-Ch 400 Volt 5.4 A Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 5.4 A | 1 Ohms | Enhancement | ||||||
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7,990
In-stock
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IR / Infineon | MOSFET MOSFT 100V 5.4A 39mOhm 37nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 5.4 A | 39 mOhms | 37 nC | ||||||||
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8,767
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 5.4A/- 7.1A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 5.4 A | 27 mOhms | 6.3 nC | ||||||
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1,351
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.4 A | 2.3 Ohms | Enhancement | ||||||
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3,134
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 5.5A/- 7.2A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 5.4 A | 34 mOhms | 4.9 nC | ||||||
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GET PRICE |
14,570
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 5.4 A | 3.51 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | ||
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919
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 5.4 A | 39 mOhms | 37 nC | Enhancement | |||||
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1,921
In-stock
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Diodes Incorporated | MOSFET 20V P-Chnl HDMOS | 12 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.4 A | 50 mOhms | Enhancement | ||||||
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904
In-stock
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Diodes Incorporated | MOSFET 30V Enhancement Mode | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 5.4 A | 65 mOhms | Enhancement | ||||||
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1,688
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 24V TSSOP-8 T&R 2.5K | 12 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.4 A | 24 mOhms | 0.95 V | 8.8 nC | Enhancement | ||||
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382
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch 4.6 MOSFET w/low gate drive cap | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.4 A | 40 mOhms | 1 V | 14.5 nC | Enhancement | ||||
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445
In-stock
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Toshiba | MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 600V 380pF | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | DTMOSIV | ||||
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206
In-stock
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Toshiba | MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | DTMOSIV | |||||
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GET PRICE |
85,000
In-stock
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Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | Enhancement | ||||
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701
In-stock
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STMicroelectronics | MOSFET N-Ch, 400V-0.85ohms 5.4A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 5.4 A | 1 Ohms | 3.75 V | 19 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.1 Ohms | 3.75 V | 33 nC | Enhancement | SuperMesh | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.3 Ohms | 35 nC | Enhancement | |||||
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2,319
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2 | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.4 A | 30 mOhms | Enhancement | OptiMOS |
