- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,069
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 6.2 A | 29 mOhms | 4 V | 39 nC | Enhancement | Directfet | |||
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5,020
In-stock
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Fairchild Semiconductor | MOSFET 40V Dual N & P-Ch PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 6.2 A | 29 mOhms | Enhancement | PowerTrench | |||||
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55,270
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel Power Trench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.2 A | 36 mOhms | Enhancement | PowerTrench | |||||
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14,486
In-stock
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Fairchild Semiconductor | MOSFET 20V N-Channel 2.5V Spec PowerTrench | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.2 A | 24 mOhms | Enhancement | PowerTrench | |||||
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2,183
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel MOSFET, UniFET | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 6.2 A | 430 mOhms | 12 nC | ||||||||
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1,141
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.1 V | 31 nC | Enhancement | CoolMOS | |||
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868
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.2 A | 1.5 Ohms | 46 nC | Enhancement | |||||
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801
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 6.2Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.2 A | 1.5 Ohms | 46 nC | Enhancement | |||||
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46,200
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 6.2 A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.2 A | 1.5 Ohms | 46 nC | Enhancement | |||||
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462
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 6.2A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 750 mOhms | Enhancement | CoolMOS | |||||
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888
In-stock
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Diodes Incorporated | MOSFET Dl 30V N-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.2 A | 35 mOhms | Enhancement | ||||||
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2,850
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 20Vdss 8Vgss 40A | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.2 A | 20 mOhms | 400 mV | 8.3 nC | Enhancement | ||||
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985
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.2 A | 25 mOhms | 800 mV | 18.4 nC | Enhancement | ||||
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435
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 N-CH 20V | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.2 A | 24 mOhms | Enhancement | PowerTrench | |||||
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615
In-stock
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Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | Enhancement | ||||
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78
In-stock
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Toshiba | MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | DTMOSIV | ||||
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121
In-stock
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Toshiba | MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 6.2A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 750 mOhms | 3 V | 24 nC | CoolMOS | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 0.98 ohm 6.2A SuperFREDmesh3 | 30 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 6.2 A | 1.15 Ohms | 4.5 V | 34 nC | ||||||
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72
In-stock
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IR / Infineon | MOSFET MOSFT 150V 35A 35mOhm 39nC Qg | 20 V | SMD/SMT | DirectFET-MZ | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 6.2 A | 29 mOhms | 4.9 V | 39 nC |
