- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,073
In-stock
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Fairchild Semiconductor | MOSFET -30V P-Channel PwrTrch MOSFET | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 10.8 mOhms | Enhancement | PowerTrench | |||||
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5,298
In-stock
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Fairchild Semiconductor | MOSFET SO-8 P-CH -20V | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 11 A | 14 mOhms | Enhancement | PowerTrench | |||||
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3,831
In-stock
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Fairchild Semiconductor | MOSFET SO-8 P-CH -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 14 mOhms | Enhancement | PowerTrench | |||||
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3,786
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 11 A | 13 mOhms | Enhancement | PowerTrench | |||||
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3,740
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 22 mOhms | 75 nC | ||||||||
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3,551
In-stock
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Fairchild Semiconductor | MOSFET PT8PZ 30/25V VIS with 2.05x2.05 PQFN pkg | 25 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 11 mOhms | - 2.6 V | 33 nC | Enhancement | PowerTrench | |||
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2,881
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | StrongIRFET | |||||||
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2,519
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 13.5mOhms 75nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 22 mOhms | 75 nC | Enhancement | |||||
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1,653
In-stock
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Fairchild Semiconductor | MOSFET P-CHANNEL MOSFET | +/- 20 V | SMD/SMT | SO-8 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 11 A | 21 mOhms | - 1.4 V | 56 nC | PowerTrench | |||||
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4,739
In-stock
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Infineon Technologies | MOSFET 30V SGL P-CH HEXFET Pwr MOSFET | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 18 mOhms | - 1.8 V | 16 nC | SmallPowIR | ||||
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5,352
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 14.6mOhms 16nC | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 11.7 mOhms | - 1.8 V | 16 nC | Enhancement | ||||
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220
In-stock
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IXYS | MOSFET -11 Amps -500V 0.75 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 11 A | 750 mOhms | - 0.122 V | 130 nC | Enhancement | ||||
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2,030
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 11 A | 210 mOhms | 21 nC | ||||||
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2,505
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | Enhancement | ||||||
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GET PRICE |
159,300
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | |||||||
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27,770
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -55V -11A 175mOhm 12.7nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | ||||||||
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72
In-stock
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IXYS | MOSFET 11 Amps 500V 0.75 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 11 A | 750 mOhms | - 5 V | 130 nC | Enhancement | ||||
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1,597
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V 11A 175mOhm 12.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | - 4 V | 19 nC | |||||
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2,496
In-stock
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Diodes Incorporated | MOSFET SINGLE P-CHANNEL | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 14 mOhms | Enhancement | ||||||
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2,980
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | Enhancement | ||||||
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2,950
In-stock
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Toshiba | MOSFET N-Ch -30V FET 2400pF -11A 1.9W | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 14 mOhms | ||||||||||
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2,611
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 13.5 mOhms | - 2.5 V | 110 nC | |||||||
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1,469
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | Through Hole | TO-247-3 | Bulk | 1 Channel | Si | P-Channel | - 100 V | - 11 A | 210 mOhms | ||||||||||
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1,830
In-stock
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IR / Infineon | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | - 4 V | 19 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | Enhancement | ||||||
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VIEW | Toshiba | MOSFET N-Ch -30V FET 2940pF -11A 1.9W | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 12.5 mOhms |
